IXTQ200N06P IXYS, IXTQ200N06P Datasheet - Page 5

• Manufacturer Part Number: IXTQ200N06P
• Description: MOSFET N-CH 60V 200A TO-3P
• Manufacturer: IXYS
• Series: PolarHT™r

Specifications of IXTQ200N06P

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 5 mOhm @ 400A, 15V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 200A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 200nC @ 10V
• Input Capacitance (ciss) @ Vds: 5400pF @ 25V
• Power - Max: 714W
• Mounting Type: Through Hole
• Package / Case: TO-3P
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.006 Ohms
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 200 A
• Power Dissipation: 714 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 60
• Id(cont), Tc=25°c, (a): 200
• Rds(on), Max, Tj=25°c, (?): 0.006
• Ciss, Typ, (pf): 5400
• Qg, Typ, (nc): 200
• Trr, Typ, (ns): 90
• Pd, (w): 714
• Rthjc, Max, (k/w): 0.21
• Package Style: TO-3P
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXTQ 200N06P
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