IXTK170N10P IXYS, IXTK170N10P Datasheet - Page 3

• Manufacturer Part Number: IXTK170N10P
• Description: MOSFET N-CH 100V 170A TO-264
• Manufacturer: IXYS
• Series: PolarHT™r

Specifications of IXTK170N10P

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 9 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 170A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 198nC @ 10V
• Input Capacitance (ciss) @ Vds: 6000pF @ 25V
• Power - Max: 714W
• Mounting Type: Through Hole
• Package / Case: TO-264
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.009 Ohms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 170 A
• Power Dissipation: 714 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 100
• Id(cont), Tc=25°c, (a): 170
• Rds(on), Max, Tj=25°c, (?): 0.009
• Ciss, Typ, (pf): 6000
• Qg, Typ, (nc): 198
• Trr, Typ, (ns): 120
• Pd, (w): 715
• Rthjc, Max, (k/w): 0.21
• Package Style: TO-264
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

© 2010 IXYS CORPORATION, All Rights Reserved
180
160
140
120
100
180
160
140
120
100
3.0
2.6
2.2
1.8
1.4
1.0
0.6
80
60
40
20
80
60
40
20
0
0
0.0
0.0
0
V
GS
Fig. 5. R
0.2
0.4
= 10V
Fig. 3. Output Characteristics @ T
50
Fig. 1. Output Characteristics @ T
15V
- - - - -
0.4
0.8
DS(on)
100
Normalized to I
0.6
1.2
I
D
V
Drain Current
V
150
DS
DS
- Amperes
- Volts
T
- Volts
J
0.8
1.6
= 175ºC
200
V
V
GS
GS
1.0
2.0
= 10V
D
= 10V
= 85A Value vs.
250
T
J
J
1.2
J
2.4
= 25ºC
= 150ºC
= 25ºC
9V
8V
7V
6V
5V
9V
8V
7V
6V
5V
300
1.4
2.8
1.6
3.2
350
180
160
140
120
100
320
280
240
200
160
120
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
80
60
40
20
80
40
0
0
-50
0.0
-50
Fig. 2. Extended Output Characteristics @ T
V
GS
External Lead Current Limit
0.5
-25
-25
Fig. 4. R
= 10V
IXTT170N10P
1.0
Fig. 6. Maximum Drain Current vs.
0
0
DS(on)
1.5
T
T
Junction Temperature
C
25
J
25
V
- Degrees Centigrade
Case Temperature
- Degrees Centigrade
GS
Normalized to I
2.0
= 10V
V
DS
50
50
- Volts
2.5
I
D
75
75
9V
8V
7V
6V
5V
= 170A
3.0
D
IXTQ170N10P
IXTK170N10P
= 85A Value vs.
100
100
3.5
125
125
I
4.0
D
= 85A
J
= 25ºC
150
150
4.5
5.0
175
175