IXTK170N10P IXYS, IXTK170N10P Datasheet - Page 4

MOSFET N-CH 100V 170A TO-264

IXTK170N10P

Manufacturer Part Number
IXTK170N10P
Description
MOSFET N-CH 100V 170A TO-264
Manufacturer
IXYS
Series
PolarHT™r
Datasheet

Specifications of IXTK170N10P

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
9 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
170A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
198nC @ 10V
Input Capacitance (ciss) @ Vds
6000pF @ 25V
Power - Max
714W
Mounting Type
Through Hole
Package / Case
TO-264
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.009 Ohms
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
170 A
Power Dissipation
714 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
100
Id(cont), Tc=25°c, (a)
170
Rds(on), Max, Tj=25°c, (?)
0.009
Ciss, Typ, (pf)
6000
Qg, Typ, (nc)
198
Trr, Typ, (ns)
120
Pd, (w)
715
Rthjc, Max, (k/w)
0.21
Package Style
TO-264
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXTK170N10P
Manufacturer:
IXYS
Quantity:
35 500
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
100,000
10,000
1,000
320
280
240
200
160
120
350
300
250
200
150
100
100
80
40
50
0
0
3
0
0
f
= 1 MHz
0.2
5
4
Fig. 9. Forward Voltage Drop of
0.4
10
5
Fig. 11. Capacitance
Fig. 7. Input Admittance
0.6
15
Intrinsic Diode
V
V
V
GS
SD
DS
6
- Volts
- Volts
- Volts
0.8
20
7
T
T
J
25
J
= - 40ºC
1
= 25ºC
150ºC
25ºC
8
1.2
30
C oss
C iss
C rss
T
J
= 150ºC
9
1.4
35
1.6
40
10
1,000
120
100
100
10
80
60
40
20
10
9
8
7
6
5
4
3
2
1
0
1
0
0
1
0
T
T
Single Pulse
V
I
I
R
J
C
D
G
DS
20
DS(on)
= 175ºC
Fig. 12. Forward-Bias Safe Operating Area
= 25ºC
= 85A
= 10mA
40
= 50V
Limit
IXTT170N10P IXTQ170N10P
40
80
DC
Fig. 8. Transconductance
60
10ms
Fig. 10. Gate Charge
Q
G
120
- NanoCoulombs
80
V
DS
I
D
- Amperes
- Volts
T
160
100
J
10
= - 40ºC
1ms
120
25ºC
150ºC
IXTK170N10P
200
140
240
160
100µs
280
180
320
200
100

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