IXTT24P20 IXYS, IXTT24P20 Datasheet
Home Discrete Semiconductor Products MOSFETs, GaNFETs - Single IXTT24P20
Manufacturer Part Number
IXTT24P20
Description
MOSFET P-CH 200V 24A TO-268
Specifications of IXTT24P20
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
110 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
24A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
150nC @ 10V
Input Capacitance (ciss) @ Vds
4200pF @ 25V
Power - Max
300W
Mounting Type
Surface Mount
Package / Case
TO-268
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.15 Ohms
Drain-source Breakdown Voltage
- 200 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
- 24 A
Power Dissipation
300 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
-200
Id(cont), Tc=25°c, (a)
-24
Rds(on), Max, Tj=25°c, (?)
0.15
Ciss, Typ, (pf)
4500
Qg, Typ, (nc)
150
Trr, Typ, (ns)
250
Pd, (w)
300
Rthjc, Max, (k/w)
0.42
Package Style
TO-268
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
© 2004 IXYS All rights reserved
P-Channel Enhancement Mode
Avalanche Rated
Standard Power MOSFET
Symbol
V
V
V
V
I
I
I
E
P
T
T
T
T
M
Weight
Symbol
V
V
I
I
R
DM
AR
D25
GSS
DSS
JM
L
GSM
AR
J
stg
GS(th)
DSS
DGR
GS
D
DSS
DS(on)
d
Test Conditions
T
T
Continuous
Transient
T
T
T
T
T
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Mounting torque
Test Conditions
V
V
V
V
V
V
C
C
C
C
C
J
J
GS
GS
DS
GS
DS
GS
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
= 25°C
= 0 V, I
= V
= ±20 V
= 0.8 • V
= 0 V
= -10 V, I
GS
, I
D
D
DC
= -250 µA
= -250 µA
DSS
D
, V
= 0.5 • I
DS
= 0
GS
D25
= 1 MΩ
T
T
(T
J
J
= 25°C
= 125°C
J
= 25°C, unless otherwise specified)
J
-200
min.
-3.0
Characteristic Values
IXTH 24P20
-55 ... +150
-55 ... +150
Maximum Ratings
1.13/10 Nm/lb.in.
typ.
-200
-200
±20
±30
300
150
400
-24
-96
-24
30
6
±100
max.
0.11
-5.0
-25
-1
mA
mJ
µA
° C
° C
° C
nA
°C
W
Ω
V
V
V
V
A
A
A
V
V
g
Features
•
•
•
•
•
Applications
•
•
•
•
Advantages
•
•
•
V
I
R
TO-247 AD
G = Gate,
S = Source,
D25
International standard package
JEDEC TO-247 AD
Low R
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Low package inductance (<5 nH)
- easy to drive and to protect
High side switching
Push-pull amplifiers
DC choppers
Automatic test equipment
Easy to mount with 1 screw
(isolated mounting screw hole)
Space savings
High power density
DSS
DS(on)
DS (on)
= - 200 V
=
≤ ≤ ≤ ≤ ≤ 0.11 Ω Ω Ω Ω Ω
HDMOS
D = Drain,
TAB = Drain
- 24 A
TM
DS98769F(12/04)
process
D (TAB)
Related parts for IXTT24P20
IXTT24P20 Summary of contents
... GSS 0.8 • V DSS DS DSS - 0.5 • I DS(on © 2004 IXYS All rights reserved IXTH 24P20 Maximum Ratings -200 = 1 MΩ -200 GS ±20 ±30 -24 -96 J -24 30 300 -55 ... +150 150 -55 ... +150 400 1.13/10 Nm/lb.in. 6 Characteristic Values (T = 25°C, unless otherwise specified) J min ...
... Pulse test, t ≤ 300 µs, duty cycle d ≤ di/dt = 100 A/µ IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 Characteristic Values (T = 25°C, unless otherwise specified) J min ...
... T - Degrees Centigrade J Fig. 5. Drain Current vs. Case Tem perature -27 -24 -21 -18 -15 - -50 - Degrees Centigrade C © 2004 IXYS All rights reserved -35 -30 -8V -25 -20 -15 -7V - Value vs. D25 2 1.9 1.8 1.7 = -24A 1 -12A D 1.5 1.4 1.3 1.2 1.1 1 0.9 ...
... Q - nanoCoulombs G Fig. 11. Capacitance 10000 f = 1MHz 1000 100 0 -5 -10 -15 - Volts D S IXYS reserves the right to change limits, test conditions, and dimensions. -80 -70 -60 -50 -40 -30 -20 -10 0 -18 -21 -24 -27 -30 1.15 1.10 1.05 1.00 0.95 0.90 0.85 0.80 0.75 100 120 140 160 ...
... Fig The © 2004 IXYS All rights reserved 1 0 Puls e W idth - millis ec onds IXTH 24P20 ...
Related keywords
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