IXTT24P20 IXYS, IXTT24P20 Datasheet - Page 5

• Manufacturer Part Number: IXTT24P20
• Description: MOSFET P-CH 200V 24A TO-268
• Manufacturer: IXYS

Specifications of IXTT24P20

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 110 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 24A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 150nC @ 10V
• Input Capacitance (ciss) @ Vds: 4200pF @ 25V
• Power - Max: 300W
• Mounting Type: Surface Mount
• Package / Case: TO-268
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.15 Ohms
• Drain-source Breakdown Voltage: - 200 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: - 24 A
• Power Dissipation: 300 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): -200
• Id(cont), Tc=25°c, (a): -24
• Rds(on), Max, Tj=25°c, (?): 0.15
• Ciss, Typ, (pf): 4500
• Qg, Typ, (nc): 150
• Trr, Typ, (ns): 250
• Pd, (w): 300
• Rthjc, Max, (k/w): 0.42
• Package Style: TO-268
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXTH 24P20
Fig. 1 3 . M a x im um Tr a ns ie nt The r m a l Re s is ta nc e
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0 . 1 0
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Puls e W idth - millis ec onds
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