IXFH11N80 IXYS, IXFH11N80 Datasheet - Page 3
![MOSFET N-CH 800V 11A TO-247AD](/photos/5/30/53063/to-247ad_sml.jpg)
IXFH11N80
Manufacturer Part Number
IXFH11N80
Description
MOSFET N-CH 800V 11A TO-247AD
Manufacturer
IXYS
Series
HiPerFET™r
Datasheet
1.IXFH13N80.pdf
(4 pages)
Specifications of IXFH11N80
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
950 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
800V
Current - Continuous Drain (id) @ 25° C
11A
Vgs(th) (max) @ Id
4.5V @ 4mA
Gate Charge (qg) @ Vgs
155nC @ 10V
Input Capacitance (ciss) @ Vds
4200pF @ 25V
Power - Max
300W
Mounting Type
Through Hole
Package / Case
TO-247AD
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.95 Ohms
Drain-source Breakdown Voltage
800 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
11 A
Power Dissipation
300 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
800
Id(cont), Tc=25°c, (a)
11
Rds(on), Max, Tj=25°c, (?)
0.95
Ciss, Typ, (pf)
4200
Qg, Typ, (nc)
128
Trr, Typ, (ns)
-
Trr, Max, (ns)
250
Pd, (w)
298
Rthjc, Max, (ºc/w)
0.42
Package Style
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXFH11N80
Manufacturer:
IXYS
Quantity:
15 500
© 2000 IXYS All rights reserved
1.40
1.35
1.30
1.25
1.20
1.15
1.10
1.05
1.00
0.95
0.90
18
16
14
12
10
18
16
14
12
10
8
6
4
2
0
8
6
4
2
0
-50
0
0
Fig. 1 Output Characteristics
Fig. 3 R
Fig. 5 Drain Current vs.
T
J
2
11N80
13N80
= 25°C
-25
T
J
4
= 25°C
2
Case Temperature
6
DS(on)
0
8 10 12 14 16 18 20 22 24 26
4
T
25
vs. Drain Current
I
C
D
V
V
- Degrees C
- Amperes
DS
GS
= 10V
50
- Volts
6
V
GS
75
= 15V
8
V
100
GS
= 10V
10
125
7V
8V
150
12
2.50
2.25
2.00
1.75
1.50
1.25
1.00
0.75
0.50
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
18
16
14
12
10
8
6
4
2
0
-50
-50
Fig. 2 Input Admittance
Fig. 4 Temperature Dependence
Fig. 6 Temperature Dependence of
0
T
V
IXFH 11N80
IXFM 11N80
J
DS
1
-25
-25
= 25°C
= 10V
V
of Drain to Source Resistance
Breakdown and Threshold Voltage
GS(th)
2
0
0
3
T
25
T
25
J
J
V
4
- Degrees C
- Degrees C
GS
50
50
- Volts
5
6
75
75
IXFH 13N80
IXFM 13N80
I
7
D
100
100
= 6.5A
BV
8
DSS
125
125
9
150
150
10
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