IXFH11N80 IXYS, IXFH11N80 Datasheet - Page 4

• Manufacturer Part Number: IXFH11N80
• Description: MOSFET N-CH 800V 11A TO-247AD
• Manufacturer: IXYS
• Series: HiPerFET™r

Specifications of IXFH11N80

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 950 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 800V
• Current - Continuous Drain (id) @ 25° C: 11A
• Vgs(th) (max) @ Id: 4.5V @ 4mA
• Gate Charge (qg) @ Vgs: 155nC @ 10V
• Input Capacitance (ciss) @ Vds: 4200pF @ 25V
• Power - Max: 300W
• Mounting Type: Through Hole
• Package / Case: TO-247AD
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.95 Ohms
• Drain-source Breakdown Voltage: 800 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 11 A
• Power Dissipation: 300 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 800
• Id(cont), Tc=25°c, (a): 11
• Rds(on), Max, Tj=25°c, (?): 0.95
• Ciss, Typ, (pf): 4200
• Qg, Typ, (nc): 128
• Trr, Typ, (ns): -
• Trr, Max, (ns): 250
• Pd, (w): 298
• Rthjc, Max, (ºc/w): 0.42
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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0.001
4500
4000
3500
3000
2500
2000
1500
1000
0.01
500
0.1
0.00001
10
8
6
4
2
0
0
1
0
0
Fig.7 Gate Charge Characteristic Curve
Fig.9 Capacitance Curves
Fig.11 Transient Thermal Impedance
D=0.5
D=0.05
D=0.02
D=0.01
D=0.2
D=0.1
Single Pulse
V
I
I
D
G
DS
= 13A
= 10mA
25
= 400V
5
Gate Charge - nCoulombs
50
0.0001
10
V
f = 1 MHz
V
C
C
CE
C
DS
iss
oss
rss
75
- Volts
= 25V
15
100
20
125
0.001
150
25
Pulse Width - Seconds
0.01
0.1
10
18
16
14
12
10
1
8
6
4
2
0
0.0
Fig.8 Forward Bias Safe Operating Area
Fig.10 Source Current vs. Source
1
IXFH 11N80
IXFM 11N80
Limited by R
0.2
0.1
T
J
= 125°C
to Drain Voltage
0.4
10
DS(on)
0.6
V
V
SD
DS
- Volts
- Volts
0.8
T
1
J
= 25°C
100
1.0
IXFH 13N80
IXFM 13N80
1.2
1.4
1000
10
10µs
100µs
1ms
10ms
100ms
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