STW19NM50N STMicroelectronics, STW19NM50N Datasheet - Page 12

• Manufacturer Part Number: STW19NM50N
• Description: MOSFET N-CH 500V 14A TO-247
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STW19NM50N

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 250 mOhm @ 7A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 14A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 34nC @ 10V
• Input Capacitance (ciss) @ Vds: 1000pF @ 50V
• Power - Max: 110W
• Mounting Type: Through Hole
• Package / Case: TO-247
• Configuration: Dual
• Transistor Polarity: Dual N-Channel
• Resistance Drain-source Rds (on): 0.25 Ohms
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: 2 V
• Continuous Drain Current: 14 A
• Power Dissipation: 110 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Gate Charge Qg: 34 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10653-5; STW19NM50N

Package mechanical data
12/15
Dim.
øR
A1
øP
b1
b2
L1
L2
A
D
E
S
b
c
e
L
Doc ID 17079 Rev 1
19.85
15.45
14.20
TO-247 mechanical data
Min.
4.85
2.20
0.40
3.70
3.55
4.50
2.0
3.0
1.0
STF19NM50N, STP19NM50N, STW19NM50N
18.50
mm.
Typ.
5.45
5.50
20.15
15.75
14.80
Max.
5.15
2.60
1.40
2.40
3.40
0.80
4.30
3.65
5.50