STW19NM50N STMicroelectronics, STW19NM50N Datasheet - Page 8

• Manufacturer Part Number: STW19NM50N
• Description: MOSFET N-CH 500V 14A TO-247
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STW19NM50N

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 250 mOhm @ 7A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 14A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 34nC @ 10V
• Input Capacitance (ciss) @ Vds: 1000pF @ 50V
• Power - Max: 110W
• Mounting Type: Through Hole
• Package / Case: TO-247
• Configuration: Dual
• Transistor Polarity: Dual N-Channel
• Resistance Drain-source Rds (on): 0.25 Ohms
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: 2 V
• Continuous Drain Current: 14 A
• Power Dissipation: 110 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Gate Charge Qg: 34 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10653-5; STW19NM50N

Electrical characteristics
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Figure 14. Normalized gate threshold voltage
Figure 16. Source-drain diode forward
vs temperature
characteristics
Doc ID 17079 Rev 1
Figure 15. Normalized on resistance vs
Figure 17. Normalized B
STF19NM50N, STP19NM50N, STW19NM50N
temperature
VDSS
vs temperature