IXFH320N10T2 IXYS, IXFH320N10T2 Datasheet - Page 2

• Manufacturer Part Number: IXFH320N10T2
• Description: MOSFET N-CH 100V 320A TO-247
• Manufacturer: IXYS
• Series: Trench™ HiPerFET™r

Specifications of IXFH320N10T2

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3.5 mOhm @ 100A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 320A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 430nC @ 10V
• Input Capacitance (ciss) @ Vds: 26000pF @ 25V
• Power - Max: 1000W
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads)
• Vdss, Max, (v): 100
• Id(cont), Tc=25°c, (a): 320
• Rds(on), Max, Tj=25°c, (?): 0.0035
• Ciss, Typ, (pf): 25000
• Qg, Typ, (nc): 430
• Trr, Typ, (ns): 98
• Pd, (w): 1000
• Rthjc, Max, (k/w): 0.15
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Symbol
(T
g
C
C
C
R
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
Symbol
(T
I
I
V
t
I
Q
Notes:
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072
S
SM
RM
d(on)
r
d(off)
f
rr
fs
SD
iss
oss
rss
Gi
thJC
thCH
g(on)
gs
gd
RM
J
J
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
= 25°C, Unless Otherwise Specified)
= 25°C, Unless Otherwise Specified)
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
2. Includes lead resistance.
V
Repetitive, Pulse Width Limited by T
V
V
I
Test Conditions
Gate Input Resistance
Resistive Switching Times
V
R
TO-247
Test Conditions
I
-di/dt = 100A/μs
V
V
F
F
DS
GS
GS
GS
R
G
GS
= 100A, V
= 150A, V
= 50V
= 10V, I
= 0V, V
= 0V
= 10V, V
= 1Ω (External)
= 10V, V
ADVANCE TECHNICAL INFORMATION
DS
D
GS
GS
DS
= 60A, Note 1
DS
= 25V, f = 1MHz
= 0V, Note 1
= 0V
= 0.5 • V
= 0.5 • V
4,835,592
4,881,106
DSS
DSS
4,931,844
5,017,508
5,034,796
, I
, I
D
D
= 100A
= 0.5 • I
5,049,961
5,063,307
5,187,117
JM
D25
5,237,481
5,381,025
5,486,715
Characteristic Values
Min.
Min.
80
Characteristic Values
6,162,665
6,259,123 B1
6,306,728 B1
2250
Typ.
Typ.
1.48
450
430
110
125
0.21
130
177
320
6.6
73
26
36
46
98
Max.
1200
0.15 °C/W
Max.
320
1.2
6,404,065 B1
6,534,343
6,583,505
°C/W
nC
nC
nC
nF
pF
pF
nC
ns
ns
ns
ns
ns
Ω
S
A
A
V
A
6,683,344
6,710,405 B2 6,759,692
6,710,463
TO-268 (IXFT) Outline
TO-247 (IXFH) Outline
Terminals: 1 - Gate
6,727,585
6,771,478 B2 7,071,537
Terminals: 1 - Gate
Dim.
A
A
A
b
b
b
C
D
E
e
L
L1
∅P
Q
R
S
1
2
1
2
20.80
15.75
19.81
3 - Source
1.65
2.87
5.20
3.55
5.89
4.32
6.15 BSC
Min.
IXFH320N10T2
IXFT320N10T2
4.7
2.2
2.2
1.0
Millimeter
1
.4
3 - Source
7,005,734 B2
7,063,975 B2
2
21.46
16.26
20.32
Max.
2.54
2.13
3.12
5.72
4.50
3.65
6.40
5.49
3
5.3
2.6
1.4
.8
e
2 - Drain
4 - Drain
0.205 0.225
0.232 0.252
∅ P
2 - Drain
.185
.087
.059
.040
.065
.113
.016
.819
.610
.780
.140
.170
Min.
242 BSC
Inches
7,157,338B2
Max.
.209
.102
.098
.055
.084
.123
.031
.845
.640
.800
.177
.144
.216