IXFH320N10T2 IXYS, IXFH320N10T2 Datasheet - Page 5

• Manufacturer Part Number: IXFH320N10T2
• Description: MOSFET N-CH 100V 320A TO-247
• Manufacturer: IXYS
• Series: Trench™ HiPerFET™r

Specifications of IXFH320N10T2

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3.5 mOhm @ 100A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 320A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 430nC @ 10V
• Input Capacitance (ciss) @ Vds: 26000pF @ 25V
• Power - Max: 1000W
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads)
• Vdss, Max, (v): 100
• Id(cont), Tc=25°c, (a): 320
• Rds(on), Max, Tj=25°c, (?): 0.0035
• Ciss, Typ, (pf): 25000
• Qg, Typ, (nc): 430
• Trr, Typ, (ns): 98
• Pd, (w): 1000
• Rthjc, Max, (k/w): 0.15
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

© 2010 IXYS CORPORATION, All Rights Reserved
300
250
200
150
100
50
0
600
500
400
300
200
100
500
450
400
350
300
250
200
150
100
25
50
0
0
40
1
Fig. 17. Resistive Turn-off Switching Times vs.
R
V
Fig. 15. Resistive Turn-on Switching Times vs.
G
DS
35
t
T
V
t
R
V
= 1Ω , V
r
J
DS
f
G
DS
= 50V
I
= 125ºC, V
D
2
60
= 1Ω, V
= 50V
= 50V
= 200A
Fig. 13. Resistive Turn-on Rise Time vs.
45
GS
3
GS
80
= 10V
t
d(on)
GS
t
= 10V
d(off)
55
= 10V
Junction Temperature
- - - -
4
T
Gate Resistance
- - - -
100
J
Drain Current
R
- Degrees Centigrade
G
65
I
D
- Ohms
5
- Amperes
120
75
I
I
D
T
D
T
6
J
J
= 100A
= 200A
= 25ºC
= 125ºC
140
85
I
D
7
= 100A
160
95
8
180
105
9
200
115
10
110
105
100
95
90
85
80
75
70
65
60
130
110
90
70
50
30
10
125
300
250
200
150
100
50
0
450
400
350
300
250
200
150
100
900
800
700
600
500
400
300
200
100
40
0
25
1
Fig. 16. Resistive Turn-off Switching Times vs.
Fig. 18. Resistive Turn-off Switching Times vs.
R
V
DS
G
T
V
t
35
= 1Ω , V
60
f
J
DS
= 50V
= 125ºC, V
2
= 50V
Fig. 14. Resistive Turn-on Rise Time vs.
45
GS
3
80
t
= 10V
Junction Temperature
d(off)
GS
55
T
= 10V
J
4
- - - -
Gate Resistance
I
- Degrees Centigrade
D
100
65
= 200A
I
D
Drain Current
R
- Amperes
5
G
- Ohms
75
I
D
120
= 200A
6
85
I
I
t
R
V
D
D
f
DS
G
IXFH320N10T2
IXFT320N10T2
= 100A
= 100A
= 1Ω, V
7
140
= 50V
95
T
105
GS
8
J
= 125ºC
t
160
= 10V
d(off)
115
9
- - - -
T
J
= 25ºC
180
125
10
120
110
100
90
80
70
60
50
500
450
400
350
300
250
200
150
100
50
200