IXTT16P60P IXYS, IXTT16P60P Datasheet - Page 3

• Manufacturer Part Number: IXTT16P60P
• Description: MOSFET P-CH 600V 16A TO-268
• Manufacturer: IXYS
• Series: PolarP™r

Specifications of IXTT16P60P

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 720 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 16A
• Vgs(th) (max) @ Id: 4.5V @ 250µA
• Gate Charge (qg) @ Vgs: 92nC @ 10V
• Input Capacitance (ciss) @ Vds: 5120pF @ 25V
• Power - Max: 460W
• Mounting Type: Surface Mount
• Package / Case: TO-268
• Vdss, Max, (v): -600.0
• Id(cont), Tc=25°c, (a): -16.0
• Rds(on), Max, Tj=25°c, (?): 0.720
• Ciss, Typ, (pf): 5120
• Qg, Typ, (nc): 92
• Trr, Typ, (ns): 440
• Pd, (w): 460
• Rthjc, Max, (k/w): 0.27
• Package Style: TO-268
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

© 2008 IXYS CORPORATION, All rights reserved
-16
-14
-12
-10
-16
-14
-12
-10
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
-8
-6
-4
-2
-8
-6
-4
-2
0
0
0
0
0
V
GS
-1
Fig. 5. R
-2
= -10V
-5
-2
Fig. 1. Output Characteristics
-4
Fig. 3. Output Characteristics
DS(on)
-3
-10
-6
-4
Drain Current
Normalized to I
-8
I
D
-15
V
V
@ 125ºC
@ 25ºC
- Amperes
-5
DS
DS
-10
- Volts
- Volts
-6
-20
V
-12
GS
V
-7
GS
T
= -10V
J
- 7V
= -10V
= 125ºC
- 6V
- 5V
-14
- 5V
- 7V
- 6V
-25
D
-8
= - 8A vs.
-16
-9
T
-30
J
= 25ºC
-18
-10
-11
-20
-35
-38
-34
-30
-26
-22
-18
-14
-10
-18
-16
-14
-12
-10
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
-6
-2
-8
-6
-4
-2
0
-50
-50
0
V
Fig. 2. Extended Output Characteristics
Fig. 4. R
-3
GS
-25
-25
= -10V
Fig. 6. Maximum Drain Current vs.
-6
0
0
DS(on)
Junction Temperature
T
-9
J
T
Case Temperature
- Degrees Centigrade
J
- Degrees Centigrade
25
25
Normalized to I
-12
@ 25ºC
V
DS
I
-15
50
50
- Volts
D
= -16A
-18
V
75
75
GS
= -10V
IXTT16P60P
-21
IXTH16P60P
D
- 7V
- 6V
- 5V
100
100
= - 8A vs.
I
-24
D
= - 8A
125
125
-27
150
150
-30