IXTT16P60P IXYS, IXTT16P60P Datasheet - Page 4

• Manufacturer Part Number: IXTT16P60P
• Description: MOSFET P-CH 600V 16A TO-268
• Manufacturer: IXYS
• Series: PolarP™r

Specifications of IXTT16P60P

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 720 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 16A
• Vgs(th) (max) @ Id: 4.5V @ 250µA
• Gate Charge (qg) @ Vgs: 92nC @ 10V
• Input Capacitance (ciss) @ Vds: 5120pF @ 25V
• Power - Max: 460W
• Mounting Type: Surface Mount
• Package / Case: TO-268
• Vdss, Max, (v): -600.0
• Id(cont), Tc=25°c, (a): -16.0
• Rds(on), Max, Tj=25°c, (?): 0.720
• Ciss, Typ, (pf): 5120
• Qg, Typ, (nc): 92
• Trr, Typ, (ns): 440
• Pd, (w): 460
• Rthjc, Max, (k/w): 0.27
• Package Style: TO-268
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions, and dimensions.
10,000
1,000
-20
-18
-16
-14
-12
-10
-50
-45
-40
-35
-30
-25
-20
-15
-10
100
-8
-6
-4
-2
-5
10
0
0
-3.5
-0.5
0
f
= 1 MHz
-5
-1.0
-4.0
Fig. 9. Forward Voltage Drop of
-10
Fig. 7. Input Admittance
Fig. 11. Capacitance
-1.5
Intrinsic Diode
-15
-4.5
V
T
V
V
GS
J
SD
DS
= 125ºC
-2.0
- Volts
-20
- Volts
- Volts
T
J
= 125ºC
-5.0
- 40ºC
25ºC
-25
-2.5
C iss
C oss
T
C rss
-30
J
-5.5
= 25ºC
-3.0
-35
-6.0
-3.5
-40
-
100.0
-
10.0
-
-
-10
1.0
0.1
32
28
24
20
16
12
-9
-8
-7
-6
-5
-4
-3
-2
-1
8
4
0
0
-
10
0
0
R
DS(on)
Fig. 12. Forward-Bias Safe Operating Area
T
T
Single Pulse
V
I
I
10
-2
J
C
D
G
DS
= 150ºC
= 25ºC
= - 8A
= -1mA
Limit
= - 300V
20
-4
Fig. 8. Transconductance
30
-6
Fig. 10. Gate Charge
Q
G
40
-8
DC
- NanoCoulombs
I
D
V
DS
- Amperes
100ms
-
100
-10
50
- Volts
10ms
-12
60
T
J
= - 40ºC
IXTT16P60P
-14
IXTH16P60P
70
1ms
25ºC
-16
80
125ºC
-18
90
100µs
-
1000
-20
100