STW9N150 STMicroelectronics, STW9N150 Datasheet
STW9N150
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STW9N150 Summary of contents
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... R per area, unrivalled gate charge and DS(on) switching characteristics. Table 1. Device summary Order code STW9N150 January 2008 N-channel 1500 V - 1.8 Ω TO-247 320 W Figure 1. Marking Package 9N150 TO-247 Rev 2 STW9N150 TO-247 Internal schematic diagram Packaging Tube www.st.com 1/12 12 ...
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... Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2/ STW9N150 ...
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... STW9N150 1 Electrical ratings Table 2. Absolute maximum ratings Symbol V Drain-source voltage ( Gate- source voltage GS I Drain current (continuous Drain current (continuous (1) I Drain current (pulsed Total dissipation at T TOT Derating factor T Operating junction temperature J T Storage temperature stg 1. Pulse width limited by safe operating area Table 3 ...
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... Gate DC Bias=0 Test signal level=20 mV open drain V = 1200 (see Figure 15) Min. Typ 1500 =125 ° 250 µ 1.8 Min. Typ 7.5 3255 = 0 294 GS 22.4 118 2 89.3 D 15.8 50.4 STW9N150 Max. Unit V 10 µA 500 µA ± 100 Ω 2.5 Max. Unit Ω ...
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... STW9N150 Table 7. Switching times Symbol t Turn-on delay time d(on) t Rise time r t Turn-off-delay time d(off) t Fall time f Table 8. Source drain diode Symbol I Source-drain current SD (1) I Source-drain current (pulsed) SDM (2) V Forward on voltage SD t Reverse recovery time rr Q Reverse recovery charge rr I Reverse recovery current ...
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... Electrical characteristics Electrical characteristics (curves) 2.1 Figure 2. Safe operating area Figure 4. Output characteristics Figure 6. Normalized BV DSS 6/12 Figure 3. Figure 5. vs temperature Figure 7. R DS(on) (Ω) 1.9 1.8 1.7 1.6 1.5 0 STW9N150 Thermal impedance Transfer characteristics Static drain-source on resistance HV41520 V =10V (A) ...
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... STW9N150 Figure 8. Gate charge vs gate-source voltage Figure =1200V DD ( =10V Figure 10. Normalized gate threshold voltage vs temperature Figure 12. Source-drain diode forward characteristics HV41500 80 100 Qg (nC) Figure 11. Normalized on resistance vs Figure 13. Maximum avalanche energy (mJ) 700 600 500 400 300 200 100 0 0 Electrical characteristics ...
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... Test circuits Figure 14. Switching times test circuit for resistive load Figure 16. Test circuit for inductive load switching and diode recovery times Figure 18. Unclamped inductive waveform 8/12 Figure 15. Gate charge test circuit Figure 17. Unclamped Inductive load test circuit Figure 19. Switching time waveform STW9N150 ...
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... STW9N150 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label ...
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... STW9N150 inch MIN. TYP. MAX. 0.19 0.20 0.086 0.102 0.039 0.055 0.079 0.094 0.118 0.134 0.015 0.03 0.781 0.793 0.608 0.620 ...
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... STW9N150 5 Revision history Table 9. Document revision history Date 24-May-2007 04-Jan-2007 Revision 1 First release 2 Document status promoted from preliminary data to datasheet Revision history Changes 11/12 ...
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... Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America 12/12 Please Read Carefully: © 2008 STMicroelectronics - All rights reserved STMicroelectronics group of companies www.st.com STW9N150 ...