STW9N150 STMicroelectronics, STW9N150 Datasheet - Page 10

MOSFET N-CH 1500V 8A TO-247

STW9N150

Manufacturer Part Number
STW9N150
Description
MOSFET N-CH 1500V 8A TO-247
Manufacturer
STMicroelectronics
Series
PowerMESH™r
Type
Power MOSFETr
Datasheet

Specifications of STW9N150

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
2.5 Ohm @ 4A, 10V
Drain To Source Voltage (vdss)
1500V (1.5kV)
Current - Continuous Drain (id) @ 25° C
8A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
89.3nC @ 10V
Input Capacitance (ciss) @ Vds
3255pF @ 25V
Power - Max
320W
Mounting Type
Through Hole
Package / Case
TO-247-3
Transistor Polarity
N Channel
Continuous Drain Current Id
8A
Drain Source Voltage Vds
1.5kV
On Resistance Rds(on)
1.8ohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
4V
Configuration
Single
Resistance Drain-source Rds (on)
2.5 Ohm @ 10 V
Drain-source Breakdown Voltage
1500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
8 A
Power Dissipation
320 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
2.5Ohm
Drain-source On-volt
1.5kV
Gate-source Voltage (max)
±30V
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
3 +Tab
Package Type
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-8465-5

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Quantity
Price
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STW9N150
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Package mechanical data
10/12
DIM.
A1
øP
øR
b1
b2
L1
L2
A
D
E
S
b
c
e
L
19.85
15.45
14.20
4.85
2.20
0.40
3.70
3.55
4.50
MIN.
1.0
2.0
3.0
TO-247 MECHANICAL DATA
18.50
5.45
5.50
mm.
TYP
20.15
15.75
14.80
MAX.
5.15
2.60
1.40
2.40
3.40
0.80
4.30
3.65
5.50
0.086
0.039
0.079
0.118
0.015
0.781
0.608
0.560
0.140
0.177
0.19
0.14
MIN.
0.214
0.728
0.216
TYP.
inch
STW9N150
0.102
0.055
0.094
0.134
0.793
0.620
0.582
0.143
0.216
MAX.
0.20
0.03
0.17

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