IXFR21N100Q IXYS, IXFR21N100Q Datasheet
Home Discrete Semiconductor Products MOSFETs, GaNFETs - Single IXFR21N100Q
Manufacturer Part Number
IXFR21N100Q
Description
MOSFET N-CH 1KV 18A ISOPLUS247
Specifications of IXFR21N100Q
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
500 mOhm @ 10.5A, 10V
Drain To Source Voltage (vdss)
1000V (1kV)
Current - Continuous Drain (id) @ 25° C
18A
Vgs(th) (max) @ Id
5V @ 4mA
Gate Charge (qg) @ Vgs
170nC @ 10V
Input Capacitance (ciss) @ Vds
5900pF @ 25V
Power - Max
350W
Mounting Type
Through Hole
Package / Case
ISOPLUS247™
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.5 Ohms
Drain-source Breakdown Voltage
1000 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
18 A
Power Dissipation
350 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
1000
Id(cont), Tc=25°c, (a)
18
Rds(on), Max, Tj=25°c, (?)
0.50
Ciss, Typ, (pf)
5900
Qg, Typ, (nc)
170
Trr, Typ, (ns)
-
Trr, Max, (ns)
250
Pd, (w)
417
Rthjc, Max, (ºc/w)
0.30
Package Style
ISOPLUS247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
HiPerFET
ISOPLUS247
(Electrically Isolated Back Surface)
N-Channel Enhancement Mode, Low Q
High dv/dt, Low t
© 2003 IXYS All rights reserved
Symbol
V
V
V
V
I
I
I
E
E
dv/dt
P
T
T
T
T
V
Weight
Symbol
V
V
I
I
R
DM
AR
D25
GSS
DSS
J
JM
stg
L
DGR
GSM
AR
AS
ISOL
DSS
GS
D
DSS
GS(th)
DS(on)
V
V
V
V
V
V
Test Conditions
T
T
Continuous
Transient
T
T
T
T
T
I
T
T
1.6 mm (0.063 in.) from case for 10 s
50/60 Hz, RMS
Notes 2, 3
Test Conditions
S
GS
DS
GS
DS
GS
GS
C
C
C
C
C
C
J
J
J
TM
= 0 V, I
= V
= 25 C to 150 C
= 25 C to 150 C; R
= 25 C
= 25 C, Note 1
= 25 C
= 25 C
= 25 C
= 25 C
= 0 V
= 20 V, V
= V
= 10 V, I
I
150 C, R
DM
GS
Power MOSFETs
rr
, di/dt
DSS
, HDMOS
, I
TM
D
D
= 1mA
= 4mA
D
= I
DS
G
100 A/ s, V
= 2
T
= 0
t = 1 min
TM
GS
Family
= 1 M
DD
(T
T
J
J
V
= 25 C, unless otherwise specified)
= 125 C
DSS
g,
1000
min.
IXFR 21N100Q
Characteristic Values
3
-55 ... +150
-55 ... +150
Maximum Ratings
typ.
1000
1000
2500
350
150
300
2.5
20
30
18
84
21
60
10
5
max.
100
0.5
100 nA
2 mA
V/ns
5 V
mJ
V~
W
C
C
C
C
V
V
V
V
A
A
A
V
A
J
g
ISOPLUS 247
Features
Applications
Advantages
G = Gate
S = Source
* Patent pending
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
IXYS advanced low Q
Low gate charge and capacitances
- easier to drive
-faster switching
Low drain to tab capacitance(<30pF)
Low R
Rugged polysilicon gate cell structure
Rated for Unclamped Inductive Load
Switching (UIS)
Fast intrinsic Rectifier
AC motor control
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
Easy assembly
Space savings
High power density
V
I
R
t
D25
rr
E153432
DSS
DS(on)
DS (on)
250 ns
TM
HDMOS
D = Drain
Isolated backside*
=
=
= 1000 V
TM
DS98723B(01/03)
g
process
process
0.50
18 A
Related parts for IXFR21N100Q
IXFR21N100Q Summary of contents
... DSS 4mA GS(th GSS DSS DS DSS DS(on Notes 2, 3 © 2003 IXYS All rights reserved IXFR 21N100Q g, Family Maximum Ratings 1000 = 1 M 1000 2 DSS 350 -55 ... +150 150 -55 ... +150 300 2500 5 Characteristic Values ( unless otherwise specified) J min. typ. max. 1000 125 C ...
... Note: 1. Pulse width limited Pulse test, t 300 s, duty cycle 10.5A T IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: Characteristic Values ( unless otherwise specified) J min. typ. max. Notes 2, 3 ...
... V - Volts DS Fig.1 Output Characteristics @ T 2 10V GS 2 125 J 2.0 1 Amperes D Fig.3 R vs. Drain Current DS(on -50 - Degrees C C Fig.5 Drain Current vs. Case Temperature © 2003 IXYS All rights reserved 25°C j 2.6 2 1.8 1.4 1 100 125 150 IXFR 21N100Q 125 Volts DS Fig ...
... Fig. 9 Drain Current vs Drain Source Voltage 1.000 0.100 0.010 0.001 10 -4 Fig. 10 Transient Thermal Impedance IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 30000 10000 1000 100 60 160 200 = 25 ...
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