IXFR100N25 IXYS, IXFR100N25 Datasheet
IXFR100N25
Manufacturer Part Number
IXFR100N25
Description
MOSFET N-CH 250V 87A ISOPLUS247
Manufacturer
IXYS
Series
HiPerFET™r
Datasheet
1.IXFR100N25.pdf
(2 pages)
Specifications of IXFR100N25
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
27 mOhm @ 50A, 10V
Drain To Source Voltage (vdss)
250V
Current - Continuous Drain (id) @ 25° C
87A
Vgs(th) (max) @ Id
4V @ 8mA
Gate Charge (qg) @ Vgs
300nC @ 10V
Input Capacitance (ciss) @ Vds
9100pF @ 25V
Power - Max
400W
Mounting Type
Through Hole
Package / Case
ISOPLUS247™
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.027 Ohms
Drain-source Breakdown Voltage
250 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
87 A
Power Dissipation
400 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
250
Id(cont), Tc=25°c, (a)
87
Rds(on), Max, Tj=25°c, (?)
0.027
Ciss, Typ, (pf)
9100
Qg, Typ, (nc)
300
Trr, Typ, (ns)
-
Trr, Max, (ns)
250
Pd, (w)
400
Rthjc, Max, (ºc/w)
0.30
Package Style
ISOPLUS247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXFR100N25
Manufacturer:
IXYS
Quantity:
200
HiPerFET
ISOPLUS247
(Electrically Isolated Backside)
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low t
Symbol
V
V
V
V
I
I
I
I
E
E
dv/dt
P
T
T
T
T
V
Weight
Symbol
V
V
I
I
R
© 2001 IXYS All rights reserved
D25
L(RMS)
DM
AR
GSS
DSS
J
JM
stg
L
DGR
GS
GSM
AR
AS
D
ISOL
DSS
GS(th)
DSS
DS(on)
V
V
Test Conditions
Test Conditions
S
GS
DS
J
J
C
C
C
C
C
C
J
C
GS
GS
DS
GS
TM
= 0 V, I
= V
DM
GS
Power MOSFETs
, I
DSS
TM
D
D
= 3mA
= 8mA
D
G
DS
T
GS
DD
J
J
J
rr
DSS
Advance Technical Information
250
min.
2.0
IXFR 100N25 V
Characteristic Values
Maximum Ratings
typ.
max.
4 V
V
I
R
t
ISOPLUS 247
Features
l
l
l
l
l
l
Applications
l
l
l
l
l
Advantages
l
l
l
D25
rr
DSS
DS(on)
E153432
250 ns
DS (on)
TM
= 250
= 87
= 27 m
TM
98840 (5/01)
V
A
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IXFR100N25 Summary of contents
Page 1
... Test Conditions 3mA DSS 8mA GS(th GSS DSS DS DSS GS R DS(on © 2001 IXYS All rights reserved Advance Technical Information IXFR 100N25 V rr Maximum Ratings GS DD DSS Characteristic Values J min. typ. max. 250 2 250 DSS D25 = DS(on) t 250 ISOPLUS 247 E153432 ...
Page 2
... Test Conditions IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: Characteristic Values J min. typ. max. DSS D T DSS D T Characteristic Values J min. typ. max. R 4,835,592 4,881,106 4,850,072 ...