IXFR100N25 IXYS, IXFR100N25 Datasheet - Page 2

• Manufacturer Part Number: IXFR100N25
• Description: MOSFET N-CH 250V 87A ISOPLUS247
• Manufacturer: IXYS
• Series: HiPerFET™r

Specifications of IXFR100N25

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 27 mOhm @ 50A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 87A
• Vgs(th) (max) @ Id: 4V @ 8mA
• Gate Charge (qg) @ Vgs: 300nC @ 10V
• Input Capacitance (ciss) @ Vds: 9100pF @ 25V
• Power - Max: 400W
• Mounting Type: Through Hole
• Package / Case: ISOPLUS247™
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.027 Ohms
• Drain-source Breakdown Voltage: 250 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 87 A
• Power Dissipation: 400 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 250
• Id(cont), Tc=25°c, (a): 87
• Rds(on), Max, Tj=25°c, (?): 0.027
• Ciss, Typ, (pf): 9100
• Qg, Typ, (nc): 300
• Trr, Typ, (ns): -
• Trr, Max, (ns): 250
• Pd, (w): 400
• Rthjc, Max, (ºc/w): 0.30
• Package Style: ISOPLUS247™
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Symbol
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
Symbol
I
I
V
t
Q
I
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
SM
RM
d(on)
d(off)
f
S
r
rr
fs
iss
oss
rss
thJC
thCK
SD
RM
g(on)
gs
gd
T
Test Conditions
Test Conditions
F
DS
GS
F
T
GS
GS
GS
G
GS
D
DS
T
DS
DS
JM
DSS
DSS
R
J
J
D
D
T
T
min.
min.
Characteristic Values
Characteristic Values
typ.
typ.
4,835,592
4,850,072
max.
max.
4,881,106
4,931,844
5,017,508
5,034,796
ISOPLUS 247 OUTLINE
5,049,961
5,063,307
IXFR 100N25
5,187,117
5,237,481
5,486,715
5,381,025