IXFX60N55Q2 IXYS, IXFX60N55Q2 Datasheet
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Manufacturer Part Number
IXFX60N55Q2
Description
MOSFET N-CH 550V 60A PLUS247
Specifications of IXFX60N55Q2
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
88 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
550V
Current - Continuous Drain (id) @ 25° C
60A
Vgs(th) (max) @ Id
4.5V @ 8mA
Gate Charge (qg) @ Vgs
200nC @ 10V
Input Capacitance (ciss) @ Vds
6900pF @ 25V
Power - Max
735W
Mounting Type
Through Hole
Package / Case
PLUS247™-3
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.088 Ohms
Drain-source Breakdown Voltage
550 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
60 A
Power Dissipation
735 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
550
Id(cont), Tc=25°c, (a)
60
Rds(on), Max, Tj=25°c, (?)
0.088
Ciss, Typ, (pf)
7300
Qg, Typ, (nc)
200
Trr, Typ, (ns)
-
Trr, Max, (ns)
250
Pd, (w)
735
Rthjc, Max, (ºc/w)
0.17
Package Style
PLUS247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
HiPerFET
Power MOSFETs
Q-Class
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low Q
Low intrinsic R
© 2004 IXYS All rights reserved
Preliminary Data Sheet
Symbol
V
V
V
V
I
I
I
E
E
dv/dt
P
T
T
T
T
M
Weight
Symbol
V
V
I
I
R
D25
DM
AR
GSS
DSS
JM
L
J
stg
DSS
DGR
GS
GSM
AR
AS
D
GS(th)
DSS
DS(on)
d
Test Conditions
T
T
Continuous
Transient
T
T
T
T
T
I
T
T
1.6 mm (0.063 in) from case for 10 s
Mounting torque
Test Conditions
V
V
V
V
V
V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
S
C
C
C
C
C
C
J
J
J
GS
DS
GS
DS
GS
GS
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
= 25°C
≤ I
≤ 150°C, R
= 25°C
= 0 V, I
= V
= ±30 V
= V
= 0 V
= 10 V, I
g
DM
, low t
TM
, di/dt ≤ 100 A/µs, V
GS
DSS
, I
D
D
DC
D
= 3mA
= 8 mA
rr
, V
= 0.5 • I
G
= 2 Ω
DS
= 0
D25
GS
= 1 MΩ
DD
T
T
(T
J
J
≤ V
J
= 25°C
= 125°C
= 25°C, unless otherwise specified)
DSS
g
IXFK 60N55Q2
IXFX 60N55Q2
TO-264
PLUS-247
TO-264
JM
,
min.
550
2.0
Characteristic Values
-55 ... +150
-55 ... +150
Maximum Ratings
typ.
0.9/6 Nm/lb.in.
150
550
550
±30
±40
240
735
300
4.0
60
60
75
20
10
6
max.
±200
4.5
50
88 mΩ
2 mA
V/ns
mJ
nA
µA
°C
°C
°C
°C
W
V
V
V
V
A
A
A
V
V
g
g
J
V
I
R
t
PLUS 247
TO-264 AA (IXFK)
G = Gate
S = Source
Features
Advantages
D25
rr
Double metal process for low gate
International standard packages
classification
Avalanche energy and current rated
Fast intrinsic Rectifier
resistance
Easy to mount
Space savings
High power density
Epoxy meet UL 94 V-0, flammability
DSS
DS(on)
≤ ≤ ≤ ≤ ≤ 250 ns
G
TM
D
(IXFX)
G
=
=
=
D
S
D = Drain
TAB = Drain
550 V
DS98984B(04/04)
60 A
88 mΩ Ω Ω Ω Ω
D (TAB)
D (TAB)
Related parts for IXFX60N55Q2
IXFX60N55Q2 Summary of contents
... GSS DSS DS DSS 0.5 • I DS(on D25 Pulse test, t ≤ 300 µs, duty cycle d ≤ © 2004 IXYS All rights reserved IXFK 60N55Q2 IXFX 60N55Q2 g Maximum Ratings 550 = 1 MΩ 550 GS ±30 ±40 60 240 4.0 ≤ DSS 735 -55 ... +150 150 -55 ... +150 ...
... Pulse test, t ≤ 300 µs, duty cycle d ≤ 25A, -di/dt = 100 A/µ IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: Characteristic Values (T = 25°C, unless otherwise specified) J min. typ. , pulse test ...
... V - Volts D S Fig Norm alize d to DS(on) 0.5 I Value vs. I D25 2.8 2 10V GS 2.4 2.2 2 1.8 1.6 1.4 1 Amperes D © 2004 IXYS All rights reserved º C 140 120 100 º C 3.1 2.8 2.5 2.2 6V 1.9 1.6 1.3 5V 0.7 0 125ºC ...
... V - Volts S D Fig. 11. Capacitance 10000 1000 f = 1MHz 100 Volts D S IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents 5 25ºC J 0.9 1 1.1 1 ...
... Fig . © 2004 IXYS All rights reserved illis IXFK 60N55Q2 IXFX 60N55Q2 ...
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