IXFX60N55Q2 IXYS, IXFX60N55Q2 Datasheet - Page 4

• Manufacturer Part Number: IXFX60N55Q2
• Description: MOSFET N-CH 550V 60A PLUS247
• Manufacturer: IXYS
• Series: HiPerFET™r

Specifications of IXFX60N55Q2

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 88 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 550V
• Current - Continuous Drain (id) @ 25° C: 60A
• Vgs(th) (max) @ Id: 4.5V @ 8mA
• Gate Charge (qg) @ Vgs: 200nC @ 10V
• Input Capacitance (ciss) @ Vds: 6900pF @ 25V
• Power - Max: 735W
• Mounting Type: Through Hole
• Package / Case: PLUS247™-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.088 Ohms
• Drain-source Breakdown Voltage: 550 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 60 A
• Power Dissipation: 735 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 550
• Id(cont), Tc=25°c, (a): 60
• Rds(on), Max, Tj=25°c, (?): 0.088
• Ciss, Typ, (pf): 7300
• Qg, Typ, (nc): 200
• Trr, Typ, (ns): -
• Trr, Max, (ns): 250
• Pd, (w): 735
• Rthjc, Max, (ºc/w): 0.17
• Package Style: PLUS247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
10000
1000
100
100
180
160
140
120
100
90
80
70
60
50
40
30
20
10
80
60
40
20
0
0
3.5
0.4
0
f = 1MHz
0.5
T
5
J
4
= 125ºC
Fig. 11. Capacitance
Fig. 7. Input Adm ittance
Fig. 9. Source Current vs.
Source-To-Drain Voltage
-40ºC
25ºC
0.6
10
T
4.5
J
= 125ºC
V
0.7
15
V
V
G S
S D
D S
5
- Volts
- Volts
0.8
20
- Volts
5.5
C iss
C oss
4,850,072
4,835,592
C rss
0.9
25
T
J
= 25ºC
6
30
1
4,931,844
4,881,106
6.5
1.1
35
5,034,796
5,017,508
1.2
40
7
5,049,961
5,063,307
1000
100
10
80
70
60
50
40
30
20
10
10
1
0
5,237,481
5,187,117
9
8
7
6
5
4
3
2
1
0
10
0
0
T
R
V
I
I
J
T
T
D
G
DS(on)
10
20
DS
J
C
= -40ºC
125ºC
= 30A
= 10mA
= 150ºC
5,381,025
Fig. 8. Transconductance
5,486,715
= 25ºC
25ºC
= 275V
20
40
Fig. 10. Gate Charge
Limit
Fig. 12. Forw ard-Bias
Safe Operating Area
Q
30
60
6,306,728B1
6,404,065B1
G
I
- nanoCoulombs
D
V
40
80
- Amperes
D S
DC
100
100 120 140 160 180 200
50
- Volts
IXFK 60N55Q2
IXFX 60N55Q2
6,162,665
6,259,123B1 6,306,728B1 6,683,344
60
70
6,534,343
80
90
100µs
1ms
25µs
10ms
6,583,505
1000
100