IXTH60N10 IXYS, IXTH60N10 Datasheet
IXTH60N10
Manufacturer Part Number
IXTH60N10
Description
MOSFET N-CH 100V 60A TO-247
Manufacturer
IXYS
Datasheet
1.IXTT60N10.pdf
(2 pages)
Specifications of IXTH60N10
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
20 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
60A
Gate Charge (qg) @ Vgs
110nC @ 10V
Input Capacitance (ciss) @ Vds
3200pF @ 25V
Power - Max
300W
Mounting Type
Through Hole
Package / Case
TO-247AD
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.02 Ohms
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
80 A
Power Dissipation
300 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
100
Id(cont), Tc=25°c, (a)
60
Rds(on), Max, Tj=25°c, (?)
0.2
Ciss, Typ, (pf)
3200
Qg, Typ, (nc)
110
Trr, Typ, (ns)
150
Pd, (w)
300
Rthjc, Max, (k/w)
0.42
Package Style
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Vgs(th) (max) @ Id
-
Lead Free Status / Rohs Status
Details
HiPerFET
Power MOSFETs
© 2003 IXYS All rights reserved
N-Channel Enhancement Mode
Symbol
V
V
V
V
I
I
I
I
E
E
dv/dt
P
T
T
T
T
M
Weight
Symbol
(T
V
V
I
I
R
D(RMS)
DM
D25
AR
GSS
DSS
JM
L
AR
J
stg
DSS
DGR
GS
GSM
AS
D
GS(th)
DSS
DS(on)
d
J
= 25°C, unless otherwise specified)
T
1.6 mm (0.063 in.) from case for 10 s
Mounting torque
TO-264
Test conditions
T
T
Continuous
Transient
T
External lead current limit
T
T
I
T
T
T
S
C
C
C
C
J
J
J
C
C
Test Conditions
V
V
V
V
V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
V
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C MOSFET chip capability
= 25°C, pulse width limited by T
= 25°C
= 25°C
= 25°C
≤ I
≤ 150°C, R
= 25°C
GS
GS
DS
DS
GS
GS
DM
= 0 V, I
= V
= ±20 V
= V
= 0 V
= 10 V, I
, di/dt ≤ 100 A/µs, V
TM
GS
DSS
, I
D
D
DC
G
= 250 µA
D
= 250 µA
= 2 Ω
, V
= 0.5 I
DS
= 0
D25
GS
= 1.0 MΩ
DD
≤ V
T
T
DSS
J
J
= 125°C
= 25°C
JM
Advance Technical Information
IXTH 60N10
IXTT 60N10
100
Min. Typ.
2.0
Characteristic Values
-55 ... +150
-55 ... +150
1.13/10
Maximum ratings
100
100
±20
±30
320
300
150
300
1.5
80
75
80
45
5
6
±100
250
Max.
4.0
25
20
Nm/lb.in.
V/ns
mJ
mΩ
°C
°C
°C
°C
W
nA
µA
µA
A
A
A
A
g
J
V
V
V
V
V
V
Features
Advantages
TO-247 AD (IXTH)
TO-268 (IXTT) Case Style
G = Gate
S = Source
V
R
I
International standard packages
Low R
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Fast intrinsic Rectifier
Easy to mount
Space savings
High power density
D25
DSS
DS(on)
DS (on)
G
HDMOS
= 100
=
=
D = Drain
TAB = Drain
S
TM
60
20 mΩ Ω Ω Ω Ω
process
DS99069(7/03)
V
A
(TAB)
(TAB)
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IXTH60N10 Summary of contents
Page 1
... GSS DSS DS DSS 0.5 I DS(on D25 Pulse test, t ≤ 300 µs, duty cycle d ≤ © 2003 IXYS All rights reserved Advance Technical Information IXTH 60N10 IXTT 60N10 Maximum ratings 100 = 1.0 MΩ 100 ±20 ± 320 1.5 ≤ DSS 300 -55 ... +150 150 -55 ...
Page 2
... Pulse test, t ≤ 300 µs, duty cycle d ≤ 30A, -di/dt = 100 A/µ Min Recommended Footprint IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: Characteristic Values (T = 25°C, unless otherwise specified) J Min. Typ. ...