IXTH60N10 IXYS, IXTH60N10 Datasheet - Page 2

• Manufacturer Part Number: IXTH60N10
• Description: MOSFET N-CH 100V 60A TO-247
• Manufacturer: IXYS

Specifications of IXTH60N10

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 20 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 60A
• Gate Charge (qg) @ Vgs: 110nC @ 10V
• Input Capacitance (ciss) @ Vds: 3200pF @ 25V
• Power - Max: 300W
• Mounting Type: Through Hole
• Package / Case: TO-247AD
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.02 Ohms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 80 A
• Power Dissipation: 300 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 100
• Id(cont), Tc=25°c, (a): 60
• Rds(on), Max, Tj=25°c, (?): 0.2
• Ciss, Typ, (pf): 3200
• Qg, Typ, (nc): 110
• Trr, Typ, (ns): 150
• Pd, (w): 300
• Rthjc, Max, (k/w): 0.42
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Vgs(th) (max) @ Id: -
• Lead Free Status / Rohs Status: Details

IXYS reserves the right to change limits, test conditions, and dimensions.
Symbol
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
Symbol
I
I
V
t
Q
Min Recommended Footprint
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
S
SM
d(on)
d(off)
f
r
rr
fs
iss
oss
g(on)
gd
thJC
thCK
SD
rss
gs
rr
Test Conditions
V
Repetitive; pulse width limited by T
I
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
I
F
F
Test Conditions
V
V
V
R
V
(TO-247)
GS
= I
= 30A, -di/dt = 100 A/µs, V
DS
GS
GS
GS
G
= 0V
S
, V
= 10 V; I
= 10 V, V
= 3.3 Ω (External)
= 10 V, V
= 0 V, V
GS
= 0 V,
D
DS
DS
DS
= 0.5 I
= 25 V, f = 1 MHz
= 0.5 V
= 0.5 V
D25
, pulse test
DSS
DSS
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665
, I
, I
R
(T
D
D
(T
= 100V
= 0.5 I
= 0.5 I
J
J
= 25°C unless otherwise specified)
= 25°C, unless otherwise specified)
JM
D25
D25
Ratings and Characteristics
Min.
Min.
Characteristic Values
30
150
3200
Typ.
Typ.
0.25
510
180
110
3
45
20
20
70
18
18
48
0.42
Max.
240
1.5
60
Max.
K/W
K/W
µC
ns
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
A
A
V
S
Terminals: 1 - Gate
TO-247 AD Outline
Terminals: 1 - Gate
TO-268 Outline
Dim.
A
A
A
b
b
b
C
D
E
e
L
L1
∅P
Q
R
S
1
2
1
2
3 - Source
3 - Source
20.80
15.75
19.81
1.65
2.87
5.20
3.55
5.89
4.32
6.15 BSC
Min.
4.7
2.2
2.2
1.0
Millimeter
1
.4
2
IXTH 60N10
3
IXTT 60N10
21.46
16.26
20.32
Max.
2.54
2.13
3.12
5.72
4.50
3.65
6.40
5.49
5.3
2.6
1.4
2 - Drain
Tab - Drain
.8
2 - Drain
Tab - Drain
6,534,343
0.205 0.225
0.232 0.252
.185
.087
.059
.040
.065
.113
.016
.819
.610
.780
.140
.170
Min.
242 BSC
Inches
Max.
.209
.102
.098
.055
.084
.123
.031
.845
.640
.800
.177
.144
.216