IXTB30N100L IXYS, IXTB30N100L Datasheet - Page 2

• Manufacturer Part Number: IXTB30N100L
• Description: MOSFET N-CH 1000V 30A PLUS264
• Manufacturer: IXYS

Specifications of IXTB30N100L

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 450 mOhm @ 500mA, 20V
• Drain To Source Voltage (vdss): 1000V (1kV)
• Current - Continuous Drain (id) @ 25° C: 30A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 545nC @ 20V
• Input Capacitance (ciss) @ Vds: 13200pF @ 25V
• Power - Max: 800W
• Mounting Type: Through Hole
• Package / Case: 3-PLUS264™
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.45 Ohms
• Drain-source Breakdown Voltage: 1000 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 30 A
• Power Dissipation: 800 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 1000
• Id(cont), Tc=25°c, (a): 30
• Rds(on), Max, Tj=25°c, (?): 0.45
• Ciss, Typ, (pf): 13700
• Qg, Typ, (nc): 545
• Trr, Typ, (ns): 1000
• Pd, (w): 800
• Rthjc, Max, (k/w): 0.156
• Package Style: PLUS264
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Symbol
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
Safe-Operating-Area Specification
Symbol
SOA
Source-Drain Diode
Symbol
I
I
V
t
Note
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072
(T
(T
S
SM
d(on)
r
d(off)
f
rr
fs
SD
iss
oss
rss
thJC
thCS
g(on)
gs
gd
J
J
= 25°C, Unless Otherwise Specified)
= 25°C, Unless Otherwise Specified)
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
Test Conditions
V
V
Resistive Switching Times
V
R
V
Test Conditions
V
Test Conditions
V
Repetitive, Pulse Width Limited by T
I
I
F
F
DS
GS
GS
GS
DS
GS
G
= I
= I
= 20V, I
= 20V, V
= 0V, V
= 15V, V
= 2Ω (External)
= 600V, I
= 0V
S
S
, V
, -di/dt = 100A/μs V
GS
= 0V, Note 1
D
DS
DS
DS
= 0.5 • I
D
= 25V, f = 1MHz
= 0.5 • V
= 0.5 • V
= 0.5A, T
4,835,592
4,881,106
DSS
, Note 1
DSS
DSS
C
4,931,844
5,017,508
5,034,796
R
= 90°C
, I
= 100V, V
, I
D
D
= 0.5 • I
= 0.5 • I
5,049,961
5,063,307
5,187,117
GS
JM
DSS
DSS
= 0V
5,237,481
5,381,025
5,486,715
Characteristic Values
Min.
Min.
300
Characteristic Values
Characteristic Values
Min.
6
6,162,665
6,259,123 B1
6,306,728 B1
Typ.
Typ.
13.7
0.13
1000
Typ.
980
115
100
545
165
10
36
70
78
86
0.156
Max.
6,404,065 B1
Max.
6,534,343
6,583,505
120
Max.
1.5
15
30
°C/W
°C/W
nC
nC
nC
nF
pF
pF
ns
ns
ns
ns
ns
W
S
A
A
V
6,683,344
6,710,405 B2 6,759,692
6,710,463
PLUS264
6,727,585
6,771,478 B2 7,071,537
IXTB30N100L
TM
(IXTB) Outline
7,005,734 B2
7,063,975 B2
7,157,338B2