IXTB30N100L IXYS, IXTB30N100L Datasheet - Page 5

• Manufacturer Part Number: IXTB30N100L
• Description: MOSFET N-CH 1000V 30A PLUS264
• Manufacturer: IXYS

Specifications of IXTB30N100L

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 450 mOhm @ 500mA, 20V
• Drain To Source Voltage (vdss): 1000V (1kV)
• Current - Continuous Drain (id) @ 25° C: 30A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 545nC @ 20V
• Input Capacitance (ciss) @ Vds: 13200pF @ 25V
• Power - Max: 800W
• Mounting Type: Through Hole
• Package / Case: 3-PLUS264™
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.45 Ohms
• Drain-source Breakdown Voltage: 1000 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 30 A
• Power Dissipation: 800 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 1000
• Id(cont), Tc=25°c, (a): 30
• Rds(on), Max, Tj=25°c, (?): 0.45
• Ciss, Typ, (pf): 13700
• Qg, Typ, (nc): 545
• Trr, Typ, (ns): 1000
• Pd, (w): 800
• Rthjc, Max, (k/w): 0.156
• Package Style: PLUS264
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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100
0.1
10
1
10
R
T
T
Single Pulse
DS(on)
J
C
= 150ºC
= 25ºC
Fig. 13. Forward-Bias Safe Operating Area
Limit
100
@ T
V
DS
- Volts
C
= 25ºC
DC
1000
100µs
25µs
10ms
1ms
10000
100
0.1
10
1
10
R
DS(on)
T
T
Single Pulse
J
C
= 150ºC
= 25ºC
Fig. 14. Forward-Bias Safe Operating Area
Limit
100
@ T
V
DS
- Volts
C
IXTB30N100L
= 90ºC
DC
1000
25µs
100µs
1ms
10ms
IXYS REF: T_30N100L(9N)4-05-07-A
10000