TPCF8B01(TE85L,F,M Toshiba, TPCF8B01(TE85L,F,M Datasheet - Page 6
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TPCF8B01(TE85L,F,M
Manufacturer Part Number
TPCF8B01(TE85L,F,M
Description
MOSFET P-CH SBD 20V 2.7A 2-3U1C
Manufacturer
Toshiba
Datasheet
1.TPCF8B01TE85LFM.pdf
(9 pages)
Specifications of TPCF8B01(TE85L,F,M
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Diode (Isolated)
Rds On (max) @ Id, Vgs
110 mOhm @ 1.4A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
2.7A
Vgs(th) (max) @ Id
1.2V @ 200µA
Gate Charge (qg) @ Vgs
6nC @ 5V
Input Capacitance (ciss) @ Vds
470pF @ 10V
Power - Max
1.35W
Mounting Type
Surface Mount
Package / Case
*
Configuration
Single Dual Drain
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.11 Ohms
Drain-source Breakdown Voltage
- 20 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
2.7 A
Power Dissipation
1.35 W
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
100
0.1
10
1
0.1
I D max (pulse)*
※ Single pulse
Curves must be derated linearly with
increase in temperature.
Ta=25℃
Drain-source voltage V DS (V)
1000
100
Safe operating area
10
1 m
1
1
10 ms*
Single pulse
10 m
10
1 ms*
V DSS max
100 m
100
Pulse width t w (s)
r
th
6
– t
1
w
Device mounted on a glass-epoxy board (a) (Note 2a)
(1)Single-device operation (Note 3a)
(2)Single-device value at dual operation (Note 3b)
Device mounted on a glass-epoxy board (b) (Note 2b)
(3)Single-device operation (Note 3a)
(4)Single-device value at dual operation (Note 3b)
10
(4)
100
(3)
(1)
(2)
1000
TPCF8B01
2009-09-29