TPC6109-H(TE85L,F) Toshiba, TPC6109-H(TE85L,F) Datasheet - Page 5

• Manufacturer Part Number: TPC6109-H(TE85L,F)
• Description: MOSFET P-CH 30V 5A VS-6
• Manufacturer: Toshiba

Specifications of TPC6109-H(TE85L,F)

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 59 mOhm @ 2.5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 5A
• Vgs(th) (max) @ Id: 1.2V @ 200µA
• Gate Charge (qg) @ Vgs: 12.3nC @ 10V
• Input Capacitance (ciss) @ Vds: 490pf @ 10V
• Power - Max: 700mW
• Mounting Type: Surface Mount
• Package / Case: 2-3T1A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: TPC6109-HTE85LFTR

10000
1000
300
250
200
150
100
100
2.5
1.5
0.5
50
10
−0.1
0
−80
2
1
0
0
Common source
V GS = 0 V
f = 1 MHz
Ta = 25°C
−2.5 V
−4.5 V
Common source
Pulse test
(1) t = 5 s
(1) DC
(2) t = 5 s
(2) DC
V GS = −1.8 V
−40
Drain-source voltage V
Ambient temperature Ta (°C)
Ambient temperature Ta (°C)
40
Capacitance – V
−1
0
R
DS (ON)
I D = −0.7, −1.4, −2.7 A
P
D
40
80
– Ta
(1) Device mounted on a
(2) Device mounted on a
I D = −1.4 A
I D = −2.7 A
– Ta
glass-epoxy board (a)
(Note 2a)
glass-epoxy board (b)
(Note 2b)
−10
80
DS
DS
120
C oss
C rss
C iss
(V)
I D = −1.4 A
120
−0.7 A
−0.7 A
−100
160
160
5
−100
−2.0
−1.5
−1.0
−0.5
−0.0
−10
−20
−16
−12
−1
−8
−4
−80
0
0
0
Common source
Ta = 25°C
Pulse test
Common source
V DS = −10 V
I D = −200 µA
Pulse test
Dynamic input/output characteristics
−2.5
V DS
−40
0.4
−2
Drain-source voltage V
Ambient temperature Ta (°C)
Total gate charge Q
−1.8
−4.5
0
−1
0.8
−4
I
DR
V
th
V GS = 0 V
– V
40
– Ta
DS
1.2
−6
V GS
g
−4 V
80
DS
(nC)
Common source
I D = −2.7 A
Ta = 25°C
Pulse test
(V)
V DD = −16 V
1.6
−8
120
−8 V
2006-11-17
TPC6105
160
−10
2.0
−10
−8
−6
−4
−2
0