2SK2376(Q) Toshiba, 2SK2376(Q) Datasheet - Page 5
2SK2376(Q)
Manufacturer Part Number
2SK2376(Q)
Description
MOSFET N-CH 60V 45A 2-10S1B
Manufacturer
Toshiba
Datasheet
1.2SK2376TE24LQ.pdf
(6 pages)
Specifications of 2SK2376(Q)
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
17 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
45A
Vgs(th) (max) @ Id
2V @ 1mA
Gate Charge (qg) @ Vgs
110nC @ 10V
Input Capacitance (ciss) @ Vds
3350pF @ 10V
Power - Max
100W
Mounting Type
Through Hole
Package / Case
2-10S1B
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
R
V
G
DD
= 25 Ω
5
= 25 V, L = 471 μH
E
AS
=
1
2
⋅
L
⋅
I
2
⋅
⎛
⎜
⎝
B
2009-09-29
VDSS
2SK2376
B
VDSS
−
V
DD
⎞
⎟
⎠