BSP304A,126 NXP Semiconductors, BSP304A,126 Datasheet - Page 5

• Manufacturer Part Number: BSP304A,126
• Description: MOSFET P-CH 300V 170MA SOT54
• Manufacturer: NXP Semiconductors

Specifications of BSP304A,126

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 17 Ohm @ 170mA, 10V
• Drain To Source Voltage (vdss): 300V
• Current - Continuous Drain (id) @ 25° C: 170mA
• Vgs(th) (max) @ Id: 2.55V @ 1mA
• Input Capacitance (ciss) @ Vds: 90pF @ 25V
• Power - Max: 1W
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Other names: 934030880126; BSP304A AMO; BSP304A AMO

Philips Semiconductors
1995 Apr 07
handbook, halfpage
handbook, halfpage
P-channel enhancement mode
vertical D-MOS transistors
V
T
f = 1 MHz.
V
T
GS
j
(mA)
DS
j
Fig.6
= 25 C.
= 25 C.
(pF)
I D
C
100
= 25 V.
= 0.
800
600
400
200
80
60
40
20
0
0
0
0
Fig.8 Typical transfer characteristics.
Capacitance as a function of drain source
voltage; typical values.
2
10
4
6
20
V
DS
8
V
C iss
C oss
C rss
GS
(V)
MLC688
MLC689
(V)
30
10
5
handbook, halfpage
handbook, halfpage
Fig.9
R DSon
T
I
T
D
j
j
(mA)
( )
= 25 C.
= 25 C.
= 170 mA.
I D
800
600
400
200
80
60
40
20
0
0
0
0
Drain-source on-state resistance as a function
of gate-source voltage; typical values.
Fig.7 Typical output characteristics.
P = 1 W
2
2
4
4
BSP304; BSP304A
6
6
8
Product specification
V
GS
8
V
= 10 V
10
V
GS
DS
MLC691
MLD139
7 V
6 V
5 V
3.5 V
4 V
3 V
(V)
(V)
10
12