BSP304A,126 NXP Semiconductors, BSP304A,126 Datasheet - Page 6

• Manufacturer Part Number: BSP304A,126
• Description: MOSFET P-CH 300V 170MA SOT54
• Manufacturer: NXP Semiconductors

Specifications of BSP304A,126

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 17 Ohm @ 170mA, 10V
• Drain To Source Voltage (vdss): 300V
• Current - Continuous Drain (id) @ 25° C: 170mA
• Vgs(th) (max) @ Id: 2.55V @ 1mA
• Input Capacitance (ciss) @ Vds: 90pF @ 25V
• Power - Max: 1W
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Other names: 934030880126; BSP304A AMO; BSP304A AMO

Philips Semiconductors
1995 Apr 07
handbook, halfpage
handbook, halfpage
R DSon
P-channel enhancement mode
vertical D-MOS transistors
T
Typical R
k
( )
Fig.10 Drain-source on-state resistance as a
j
= 25 C.
=
Fig.12 Temperature coefficient of drain-source
k
---------------------------------------- -
R
2.5
1.5
0.5
60
50
40
30
20
10
DSon
2
1
0
R
0
1
DSon
50
DSon
function of drain current; typical values.
at 25 C
on-state resistance.
at I
at T
D
j
= 170 mA; V
0
10
GS
50
V GS = 3 V
= 10 V.
10
2
100
I D (mA)
4 V
T ( C)
j
MLC695
MLC692
o
10 V
5 V
7 V
6 V
10
150
3
6
handbook, halfpage
Typical V
k
=
Fig.11 Temperature coefficient of gate-source
k
1.1
1.0
0.9
0.8
------------------------------------- -
V
V
GSth
GSth
50
GSth
at 25 C
threshold voltage.
at T
at I
D
j
= 1 mA; V
0
DS
BSP304; BSP304A
=V
50
GS
.
Product specification
100
T ( C)
j
MLC696
o
150