BUK9508-55A,127 NXP Semiconductors, BUK9508-55A,127 Datasheet

MOSFET N-CH 55V 75A SOT78

BUK9508-55A,127

Manufacturer Part Number
BUK9508-55A,127
Description
MOSFET N-CH 55V 75A SOT78
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet

Specifications of BUK9508-55A,127

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
7.5 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
75A
Vgs(th) (max) @ Id
2V @ 1mA
Gate Charge (qg) @ Vgs
92nC @ 5V
Input Capacitance (ciss) @ Vds
6021pF @ 25V
Power - Max
253W
Mounting Type
Through Hole
Package / Case
TO-220AB-3
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0075 Ohms
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
+/- 10 V
Continuous Drain Current
125 A
Power Dissipation
253 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Fall Time
167 ns
Minimum Operating Temperature
- 55 C
Rise Time
175 ns
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
934055644127
BUK9508-55A
BUK9508-55A
1. Description
2. Features
3. Applications
4. Pinning information
Table 1:
[1]
Pin
1
2
3
mb
It is not possible to make connection to pin 2 of the SOT404 package.
Description
gate (g)
drain (d)
source (s)
mounting base;
connected to drain (d)
Pinning - SOT78 and SOT404, simplified outline and symbol
N-channel enhancement mode field-effect power transistor in a plastic package using
TrenchMOS™ technology, featuring very low on-state resistance.
Product availability:
BUK9508-55A in SOT78 (TO-220AB)
BUK9608-55A in SOT404 (D
[1]
BUK95/9608-55A
TrenchMOS™ logic level FET
Rev. 03 — 6 May 2002
TrenchMOS™ technology
Q101 compliant
175 C rated
Logic level compatible.
Automotive and general purpose power switching:
12 V and 24 V loads
Motors, lamps and solenoids.
Simplified outline
SOT78 (TO-220AB)
1 2
mb
3
MBK106
2
-PAK).
SOT404 (D
1
mb
2
2
-PAK)
3
MBK116
Symbol
MBB076
g
Product data
d
s

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BUK9508-55A,127 Summary of contents

Page 1

... TrenchMOS™ logic level FET Rev. 03 — 6 May 2002 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance. Product availability: BUK9508-55A in SOT78 (TO-220AB) BUK9608-55A in SOT404 (D 2. Features TrenchMOS™ technology Q101 compliant 175 C rated Logic level compatible ...

Page 2

Philips Semiconductors 5. Quick reference data Table 2: Quick reference data Symbol Parameter V drain-source voltage (DC drain current (DC total power dissipation tot T junction temperature j R drain-source on-state resistance DSon 6. Limiting values ...

Page 3

Philips Semiconductors 120 P der (%) 100 P tot P = ---------------------- - 100% der P tot 25 C Fig 1. Normalized total power dissipation as a function of mounting base temperature ...

Page 4

Philips Semiconductors 7. Thermal characteristics Table 4: Thermal characteristics Symbol Parameter R thermal resistance from junction to th(j-mb) mounting base R thermal resistance from junction to ambient th(j-a) SOT78 SOT404 7.1 Transient thermal impedance 1 Z th(j-mb) = 0.5 (K/W) ...

Page 5

Philips Semiconductors 8. Characteristics Table 5: Characteristics unless otherwise specified. j Symbol Parameter Static characteristics V drain-source breakdown (BR)DSS voltage V gate-source threshold voltage I GS(th) I drain-source leakage current DSS I gate-source leakage current GSS ...

Page 6

Philips Semiconductors Table 5: Characteristics …continued unless otherwise specified. j Symbol Parameter Source-drain diode V source-drain (diode forward) SD voltage t reverse recovery time rr Q recovered charge r 400 ...

Page 7

Philips Semiconductors 2.5 V GS(th) (V) 2 max 1.5 typ min 1 0 Fig 9. Gate-source threshold voltage as a function of junction temperature. 120 g ...

Page 8

Philips Semiconductors 100 175 º Fig 13. Transfer characteristics: drain current as a function of gate-source voltage; typical values ...

Page 9

Philips Semiconductors 9. Package outline Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB ( DIMENSIONS (mm are the original dimensions UNIT A 1 4.5 1.39 0.9 1.3 mm ...

Page 10

Philips Semiconductors Plastic single-ended surface mounted package (Philips version of D (one lead cropped DIMENSIONS (mm are the original dimensions UNIT c 4.50 1.40 0.85 0.64 mm 4.10 1.27 0.60 0.46 ...

Page 11

Philips Semiconductors 10. Soldering handbook, full pagewidth 2.25 8.35 8.15 4.60 4.85 7.95 solder lands solder resist occupied area solder paste Dimensions in mm. Fig 18. Reflow soldering footprint for SOT404. 9397 750 09573 Product data 10.85 10.60 10.50 1.50 ...

Page 12

... Revision history Rev Date CPCN Description 03 20020506 - Product data (9397 750 09573); supersedes Product data of BUK9508_9608-55A_2 September 2000. Modifications: • The format of this specification has been redesigned to comply with Philips Semiconductors’ new presentation and information standard. • Thermal resistance figure lowered (j-mb) devices current and power handling capabilities (See • ...

Page 13

Philips Semiconductors Philips Semiconductors 12. Data sheet status [1] [2] Data sheet status Product status Objective data Development Preliminary data Qualification Product data Production [1] Please consult the most recently issued data sheet before initiating or completing a design. [2] ...

Page 14

Philips Semiconductors Contents 1 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 2 Features . . . ...

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