BUK9508-55 NXP Semiconductors, BUK9508-55 Datasheet

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BUK9508-55

Manufacturer Part Number
BUK9508-55
Description
Manufacturer
NXP Semiconductors
Datasheet

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Manufacturer
Quantity
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Part Number:
BUK9508-55
Manufacturer:
NXP
Quantity:
12 500
Part Number:
BUK9508-55A
Manufacturer:
ST
Quantity:
9 000
Part Number:
BUK9508-55B
Manufacturer:
NXP
Quantity:
81 000
Philips Semiconductors
GENERAL DESCRIPTION
N-channel enhancement mode logic
level field-effect power transistor in a
plastic
technology. The device features very
low on-state resistance and has
integral zener diodes giving ESD
protection up to 2kV. It is intended for
use in automotive and general
purpose switching applications.
PINNING - TO220AB
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
ESD LIMITING VALUE
THERMAL RESISTANCES
February 1997
TrenchMOS
Logic level FET
SYMBOL
V
V
I
I
I
P
T
SYMBOL
V
SYMBOL
R
R
D
D
DM
PIN
V
stg
DS
DGR
tot
C
tab
th j-mb
th j-a
1
2
3
GS
, T
j
envelope
gate
drain
source
drain
DESCRIPTION
PARAMETER
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Drain current (DC)
Drain current (DC)
Drain current (pulse peak value)
Total power dissipation
Storage & operating temperature
PARAMETER
Electrostatic discharge capacitor
voltage
PARAMETER
Thermal resistance junction to
mounting base
Thermal resistance junction to
ambient
using
transistor
’trench’
QUICK REFERENCE DATA
PIN CONFIGURATION
SYMBOL
V
I
P
T
R
D
j
DS
tot
DS(ON)
CONDITIONS
-
R
-
T
T
T
T
-
CONDITIONS
Human body model
(100 pF, 1.5 k )
CONDITIONS
-
in free air
mb
mb
mb
mb
GS
tab
PARAMETER
Drain-source voltage
Drain current (DC)
Total power dissipation
Junction temperature
Drain-source on-state
resistance
= 25 ˚C
= 100 ˚C
= 25 ˚C
= 25 ˚C
= 20 k
1 2 3
1
V
GS
= 5 V
SYMBOL
TYP.
MIN.
MIN.
- 55
60
-
-
-
-
-
-
-
-
-
g
MAX.
Product specification
187
175
55
75
8
MAX.
MAX.
MAX.
240
187
175
0.8
55
55
10
75
65
2
BUK9508-55
-
d
s
Rev 1.000
UNIT
UNIT
UNIT
K/W
K/W
UNIT
kV
W
˚C
m
V
V
V
A
A
A
W
˚C
V
A

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BUK9508-55 Summary of contents

Page 1

... CONDITIONS - ˚ 100 ˚ ˚ ˚ CONDITIONS Human body model (100 pF, 1 CONDITIONS - in free air 1 Product specification BUK9508-55 MAX 187 175 SYMBOL MIN. MAX. UNIT - 240 - 187 ...

Page 2

... Measured from source lead 6 mm from package to source bond pad CONDITIONS -dI /dt = 100 - Product specification BUK9508-55 MIN. TYP. MAX. UNIT 1.0 1.5 2 ...

Page 3

... RDS(ON) = VDS/ID 120 140 160 180 = f & 1E+00 1E-01 1E-02 1E-03 120 140 160 180 Product specification BUK9508-55 MIN. TYP. MAX ˚C mb 1000 100 100 VDS / V Fig.3. Safe operating area ˚ f single pulse; parameter Zth / (K/W) 0 ...

Page 4

... BUK9508-55 2.5 3.2 3.4 3 0.5 80 100 120 = 25 ˚C . Fig.9. Normalised drain-source on-state resistance 2 0.5 0 -100 Product specification BUK9508- ID f(I ); conditions BUK959-60 Rds(on) normlised to 25degC -100 - 100 Tmb / degC / DS(ON) DS(ON)25 ˚C j ...

Page 5

... Coss Crss 10 100 , Fig.15. Normalised avalanche energy rating. iss oss rss VDS = 44V VGS Product specification BUK9508-55 Tj/C = 175 25 0 0.2 0.4 0.6 0.8 VSDS/V Fig.14. Typical reverse diode current. ); conditions parameter T SDS GS WDSS 100 120 140 Tmb / C ...

Page 6

... Philips Semiconductors TrenchMOS transistor Logic level FET RD VGS RG 0 Fig.17. Switching test circuit. February 1997 VDD + VDS - T.U.T. 6 Product specification BUK9508-55 Rev 1.000 ...

Page 7

... Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent damage to MOS gate oxide. 2. Refer to mounting instructions for SOT78 (TO220) envelopes. 3. Epoxy meets UL94 V0 at 1/8". February 1997 10,3 max 3,7 2,8 3,0 13,5 min 1 max (2x) 0,9 max (3x) 2,54 2,54 Fig.18. SOT78 (TO220AB); pin 2 connected to mounting base. 7 Product specification BUK9508-55 4,5 max 1,3 5,9 min 0,6 2,4 Rev 1.000 15,8 max ...

Page 8

... Philips customers using or selling these products for use in such applications their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. February 1997 8 Product specification BUK9508-55 Rev 1.000 ...

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