BUK9518-55,127 NXP Semiconductors, BUK9518-55,127 Datasheet - Page 3

• Manufacturer Part Number: BUK9518-55,127
• Description: MOSFET N-CH 55V 57A SOT78
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK9518-55,127

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 18 mOhm @ 25A, 5V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 57A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Input Capacitance (ciss) @ Vds: 2600pF @ 25V
• Power - Max: 125W
• Mounting Type: Through Hole
• Package / Case: TO-220AB-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Other names: 934045210127; BUK9518-55; BUK9518-55

Philips Semiconductors
AVALANCHE LIMITING VALUE
April 1998
TrenchMOS
Logic level FET
SYMBOL PARAMETER
W
DSS
ID% = 100 I
120
110
100
Fig.2. Normalised continuous drain current.
120
110
100
90
80
70
60
50
40
30
20
10
90
80
70
60
50
40
30
20
10
0
0
Fig.1. Normalised power dissipation.
0
0
PD%
ID%
Drain-source non-repetitive
unclamped inductive turn-off
energy
20
PD% = 100 P
20
D
/I
40
40
D 25 ˚C
transistor
60
60
= f(T
80
80
Tmb / C
Tmb / C
D
mb
/P
); conditions: V
D 25 ˚C
Normalised Current Derating
100
100
Normalised Power Derating
120
120
= f(T
140
140
mb
)
160
160
GS
CONDITIONS
I
V
D
180
180
GS
5 V
= 50 A; V
= 5 V; R
3
DD
GS
= 50 ; T
25 V;
I
0.001
D
0.01
0.1
& I
10
RDS(ON) = VDS/ID
Fig.3. Safe operating area. T
1000
1
1E-07
100
Fig.4. Transient thermal impedance.
10
DM
1
Zth j-mb / (K/W)
mb
D =
1
0.05
0.02
Z
0.5
0.2
0.1
= f(V
= 25 ˚C
0
th j-mb
DS
1E-05
= f(t); parameter D = t
); I
DC
DM
MIN.
single pulse; parameter t
10
-
1E-03
VDS / V
t / s
P
D
TYP.
-
Product specification
t
p
T
1E-01
BUK9518-55
mb
D =
100
MAX.
= 25 ˚C
p
BUKx55-lv
/T
125
t
T
p
t
tp =
1 us
10 us
100 us
1 ms
10 ms
100 ms
SOAX518
Rev 1.000
1E+01
UNIT
mJ
p