SI4800,518 NXP Semiconductors, SI4800,518 Datasheet - Page 6

• Manufacturer Part Number: SI4800,518
• Description: MOSFET N-CH 30V 9A SOT96-1
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of SI4800,518

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 18.5 mOhm @ 9A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 9A
• Vgs(th) (max) @ Id: 800mV @ 250µA
• Gate Charge (qg) @ Vgs: 11.8nC @ 5V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934056750518; SI4800 /T3; SI4800 /T3

Philips Semiconductors
9397 750 12899
Product data
Fig 5. Output characteristics: drain current as a
Fig 7. Drain-source on-state resistance as a function
R DSon
(m )
T
T
(A)
j
j
I D
10
= 25 C
80
60
40
20
= 25 C
8
6
4
2
0
0
function of drain-source voltage; typical values.
of drain current; typical values.
0
0
10 V
0.2
2
5 V
0.4
3 V
4
0.6
6
V GS = 2.8 V
V GS = 2.3 V
0.8
8
V DS (V)
I D (A)
03ao99
2.8 V
2.7 V
2.5 V
03ap00
10 V
3 V
4 V
5 V
Rev. 02 — 17 February 2004
10
1
Fig 6. Transfer characteristics: drain current as a
Fig 8. Normalized drain-source on-state resistance
T
a
(A)
I D
j
a
1.5
0.5
= 25 C and 150 C; V
=
10
2
1
0
8
6
4
2
0
function of gate-source voltage; typical values.
factor as a function of junction temperature.
-60
---------------------------- -
R
0
DSon 25 C
R
V DS > I D x R DSon
N-channel TrenchMOS™ logic level FET
DSon
0
1
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
DS
60
I
D
T j = 150 C
x R
2
DSon
120
V GS (V)
25 C
T j ( C)
003aaa326
03aa27
SI4800
180
3
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