SI4800,518 NXP Semiconductors, SI4800,518 Datasheet - Page 9

• Manufacturer Part Number: SI4800,518
• Description: MOSFET N-CH 30V 9A SOT96-1
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of SI4800,518

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 18.5 mOhm @ 9A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 9A
• Vgs(th) (max) @ Id: 800mV @ 250µA
• Gate Charge (qg) @ Vgs: 11.8nC @ 5V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934056750518; SI4800 /T3; SI4800 /T3

Philips Semiconductors
7. Package outline
Fig 14. SOT96-1 (SO8).
9397 750 12899
Product data
SO8: plastic small outline package; 8 leads; body width 3.9 mm
DIMENSIONS (inch dimensions are derived from the original mm dimensions)
Notes
1. Plastic or metal protrusions of 0.15 mm (0.006 inch) maximum per side are not included.
2. Plastic or metal protrusions of 0.25 mm (0.01 inch) maximum per side are not included.
inches
UNIT
mm
OUTLINE
VERSION
SOT96-1
0.069
max.
1.75
A
0.010
0.004
0.25
0.10
A
1
0.057
0.049
1.45
1.25
A
076E03
2
IEC
1
8
Z
pin 1 index
0.25
0.01
A
y
3
e
0.019
0.014
0.49
0.36
b
p
D
0.0100
0.0075
0.25
0.19
MS-012
JEDEC
c
b
REFERENCES
p
0.20
0.19
D
Rev. 02 — 17 February 2004
5.0
4.8
5
4
0
(1)
w
0.16
0.15
E
4.0
3.8
(2)
M
JEITA
scale
1.27
0.05
2.5
c
e
A
0.244
0.228
2
H
6.2
5.8
A
E
1
0.041
1.05
5 mm
L
N-channel TrenchMOS™ logic level FET
H
0.039
0.016
E
E
detail X
1.0
0.4
L
p
L
0.028
0.024
L
0.7
0.6
Q
p
Q
PROJECTION
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
(A )
EUROPEAN
0.25
0.01
3
A
v
0.25
0.01
A
w
X
v
M
0.004
0.1
A
y
ISSUE DATE
99-12-27
03-02-18
SI4800
0.028
0.012
Z
0.7
0.3
(1)
SOT96-1
8
0
o
o
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