BUK7L11-34ARC,127 NXP Semiconductors, BUK7L11-34ARC,127 Datasheet - Page 10

MOSFET N-CH 34V 75A TO220AB

BUK7L11-34ARC,127

Manufacturer Part Number
BUK7L11-34ARC,127
Description
MOSFET N-CH 34V 75A TO220AB
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet

Specifications of BUK7L11-34ARC,127

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
11 mOhm @ 30A, 10V
Drain To Source Voltage (vdss)
34V
Current - Continuous Drain (id) @ 25° C
75A
Vgs(th) (max) @ Id
3.8V @ 1mA
Gate Charge (qg) @ Vgs
53nC @ 10V
Input Capacitance (ciss) @ Vds
2506pF @ 25V
Power - Max
172W
Mounting Type
Through Hole
Package / Case
TO-220
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
934057492127
BUK7L11-34ARC
BUK7L11-34ARC
Philips Semiconductors
BUK7L11-34ARC_4
Product data sheet
Fig 16. Drain-source clamping voltage as a function of
Fig 18. Source-gate clamping current as a function of
V
DSR(CL)
(V)
(A)
42.0
41.5
41.0
40.5
10
I
10
10
10
10
G
-1
-2
-3
-4
-5
I
drain current; typical values
source-gate clamping voltage; typical values
GD(CL)
20
0
= 2 mA
22
2
24
T
T
T
j
j
j
= 175 C
= 25 C
= -55 C
4
26
6
28
V
8
003aab215
30
(BR)GSS
I
D
03nj57
(A)
Rev. 04 — 16 December 2005
(V)
10
32
Fig 17. Drain-source clamping voltage as a function of
Fig 19. Normalized source-gate clamping voltage as a
V
DSR(CL)
(V)
1.03
1.02
1.01
0.99
0.98
a
43
42
41
40
39
1
-100
I
gate-source clamping current; typical values
function of junction temperature; typical values
D
0
a
= 10 A
=
------------------------------------- -
V
-50
BR GSS 25 C
V
T
T
T
j
j
j
= 175 C
= 25 C
= -55 C
BR GSS
BUK7L11-34ARC
1
0
TrenchPLUS standard level FET
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
50
100
2
-I
GS(CL)
150
003aab216
03nj56
T
(mA)
j
( C)
200
3
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