BUK7L11-34ARC,127 NXP Semiconductors, BUK7L11-34ARC,127 Datasheet - Page 9

• Manufacturer Part Number: BUK7L11-34ARC,127
• Description: MOSFET N-CH 34V 75A TO220AB
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK7L11-34ARC,127

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 11 mOhm @ 30A, 10V
• Drain To Source Voltage (vdss): 34V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 3.8V @ 1mA
• Gate Charge (qg) @ Vgs: 53nC @ 10V
• Input Capacitance (ciss) @ Vds: 2506pF @ 25V
• Power - Max: 172W
• Mounting Type: Through Hole
• Package / Case: TO-220
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934057492127; BUK7L11-34ARC; BUK7L11-34ARC

Philips Semiconductors
BUK7L11-34ARC_4
Product data sheet
Fig 13. Transfer characteristics: drain current as a
Fig 15. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values
100
(A)
I
D
80
60
40
20
0
V
function of gate-source voltage; typical values
V
0
DS
GS
= 25 V
= 0 V
T
j
2
= 175 C
4
T
j
= 25 C
100
(A)
I
80
60
40
20
S
6
0
0.0
V
GS
03nj45
(V)
0.2
Rev. 04 — 16 December 2005
8
T
j
= 175 C
0.4
0.6
Fig 14. Gate-source voltage as a function of gate
0.8
V
(V)
GS
10
8
6
4
2
0
T
charge; typical values
T
0
j
j
= 25 C; I
= 25 C
1.0
V
03nj42
SD
(V)
1.2
D
V
BUK7L11-34ARC
= 25 A
DD
20
TrenchPLUS standard level FET
= 14 V
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
40
V
Q
DD
G
= 27 V
(nC)
03nj43
60
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