IRF7453TR International Rectifier, IRF7453TR Datasheet - Page 2

• Manufacturer Part Number: IRF7453TR
• Description: MOSFET N-CH 250V 2.2A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7453TR

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 230 mOhm @ 1.3A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 2.2A
• Vgs(th) (max) @ Id: 5.5V @ 250µA
• Gate Charge (qg) @ Vgs: 38nC @ 10V
• Input Capacitance (ciss) @ Vds: 930pF @ 25V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Diode Characteristics
IRF7453
Dynamic @ T
Avalanche Characteristics
Static @ T
V
R
V
I
g
Q
Q
Q
t
t
t
t
C
C
C
C
C
C
E
I
I
I
V
t
Q
I
DSS
GSS
AR
SM
d(on)
r
d(off)
f
S
rr
V
fs
AS
DS(on)
(BR)DSS
GS(th)
SD
g
gs
gd
iss
oss
rss
oss
oss
oss
rr
2
(BR)DSS
eff.
/ T
J
Breakdown Voltage Temp. Coefficient
Drain-to-Source Breakdown Voltage
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
J
= 25°C (unless otherwise specified)
J
Single Pulse Avalanche Energy
Avalanche Current
= 25°C (unless otherwise specified)
Parameter
Parameter
Parameter
Parameter
–––
250
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min. Typ. Max. Units
3.0
Min. Typ. Max. Units
1.8
Min. Typ. Max. Units
–––
–––
–––
–––
–––
0.33
1050 –––
–––
––– 0.23
–––
–––
–––
–––
––– -100
–––
930
130
–––
–––
–––
340
9.0
6.0
2.5
98
25
11
19
20
23
52
96
–––
–––
250
100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
150
510
5.5
9.0
1.3
25
38
17
2.3
17
V/°C
µA
nA
ns
nC
pF
nC
ns
V
V
S
A
V
Typ.
–––
–––
V
V
V
V
V
V
V
V
V
V
V
I
R
V
V
V
ƒ = 1.0MHz
V
V
V
showing the
p-n junction diode.
T
T
di/dt = 100A/µs
MOSFET symbol
integral reverse
Reference to 25°C, I
I
D
D
J
J
GS
GS
DS
DS
DS
GS
GS
DS
DS
GS
DD
GS
GS
DS
GS
GS
GS
G
= 1.3A
= 1.3A
= 25°C, I
= 25°C, I
= 6.0
= 0V, I
= 10V, I
= V
= 250V, V
= 200V, V
= 24V
= -24V
= 50V, I
= 200V
= 10V,
= 125V
= 10V
= 0V
= 25V
= 0V, V
= 0V, V
= 0V, V
GS
, I
D
S
F
DS
D
D
D
DS
DS
Conditions
= 250µA
Conditions
Conditions
= 1.3A, V
= 1.3A
= 1.3A
= 250µA
= 1.3A
GS
GS
= 0V to 200V
Max.
= 1.0V, ƒ = 1.0MHz
= 200V, ƒ = 1.0MHz
200
2.2
= 0V
= 0V, T
D
www.irf.com
= 1mA
GS
J
G
= 0V
= 150°C
Units
mJ
A
D
S