IRF7453TR International Rectifier, IRF7453TR Datasheet - Page 3

• Manufacturer Part Number: IRF7453TR
• Description: MOSFET N-CH 250V 2.2A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7453TR

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 230 mOhm @ 1.3A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 2.2A
• Vgs(th) (max) @ Id: 5.5V @ 250µA
• Gate Charge (qg) @ Vgs: 38nC @ 10V
• Input Capacitance (ciss) @ Vds: 930pF @ 25V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

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0.01
100
0.1
100
10
0.1
Fig 3. Typical Transfer Characteristics
10
Fig 1. Typical Output Characteristics
1
1
0.1
5.0
TOP
BOTTOM
V
T = 150 C
DS
V
J
VGS
15V
12V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
5.5
GS
, Drain-to-Source Voltage (V)
, Gate-to-Source Voltage (V)
T = 25 C
°
J
1
6.0
°
5.0V
20µs PULSE WIDTH
T = 25 C
V
20µs PULSE WIDTH
6.5
J
DS
10
= 50V
°
7.0
7.5
100
Fig 2. Typical Output Characteristics
100
0.1
3.0
2.5
2.0
1.5
1.0
0.5
0.0
10
1
0.1
-60 -40 -20
Fig 4. Normalized On-Resistance
TOP
BOTTOM
I =
D
2.2A
V
DS
VGS
15V
12V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
T , Junction Temperature ( C)
J
Vs. Temperature
, Drain-to-Source Voltage (V)
0
1
20
40
60
IRF7453
20µs PULSE WIDTH
T = 150 C
5.0V
J
80 100 120 140 160
10
°
V
°
GS
=
10V
3
100