IRF7453TR International Rectifier, IRF7453TR Datasheet - Page 5

• Manufacturer Part Number: IRF7453TR
• Description: MOSFET N-CH 250V 2.2A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7453TR

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 230 mOhm @ 1.3A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 2.2A
• Vgs(th) (max) @ Id: 5.5V @ 250µA
• Gate Charge (qg) @ Vgs: 38nC @ 10V
• Input Capacitance (ciss) @ Vds: 930pF @ 25V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

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0.01
100
2.5
2.0
1.5
1.0
0.5
0.0
0.1
10
0.00001
1
25
D = 0.50
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Fig 9. Maximum Drain Current Vs.
0.20
0.10
0.05
0.02
0.01
50
T , Case Temperature ( C)
C
Ambient Temperature
(THERMAL RESPONSE)
0.0001
SINGLE PULSE
75
100
0.001
125
°
t , Rectangular Pulse Duration (sec)
1
150
0.01
Fig 10b. Switching Time Waveforms
Fig 10a. Switching Time Test Circuit
V
90%
10%
V
DS
GS
0.1
t
R
d(on)
Pulse Width
Duty Factor
G
1. Duty factor D = t / t
2. Peak T = P
10V
V
Notes:
GS
t
r
V
DS
1
J
µs
DM
x Z
1
D.U.T.
thJA
t
P
2
IRF7453
d(off)
DM
R
+ T
10
D
A
t
t
1
f
t
2
+
-
V
DD
100
5