IRF7453TR International Rectifier, IRF7453TR Datasheet - Page 4

• Manufacturer Part Number: IRF7453TR
• Description: MOSFET N-CH 250V 2.2A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7453TR

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 230 mOhm @ 1.3A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 2.2A
• Vgs(th) (max) @ Id: 5.5V @ 250µA
• Gate Charge (qg) @ Vgs: 38nC @ 10V
• Input Capacitance (ciss) @ Vds: 930pF @ 25V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

IRF7453
10000
4
1000
100
10
100
0.1
10
Fig 5. Typical Capacitance Vs.
1
Fig 7. Typical Source-Drain Diode
0.2
1
Drain-to-Source Voltage
Coss
Ciss
Crss
V
V DS , Drain-to-Source Voltage (V)
SD
0.4
T = 150 C
J
Forward Voltage
,Source-to-Drain Voltage (V)
V GS = 0V,
C iss = C gs + C gd , C ds
C rss = C gd
C oss = C ds + C gd
10
°
0.6
T = 25 C
J
0.8
f = 1 MHZ
100
°
V
1.0
GS
SHORTED
= 0 V
1.2
1000
100
0.1
10
20
16
12
8
4
0
1
Fig 8. Maximum Safe Operating Area
0
Fig 6. Typical Gate Charge Vs.
1
I =
D
T A = 25°C
T J = 150°C
Single Pulse
1.3A
Gate-to-Source Voltage
V DS , Drain-toSource Voltage (V)
Q , Total Gate Charge (nC)
G
10
OPERATION IN THIS AREA
LIMITED BY R DS (on)
10
V
V
V
DS
DS
DS
20
= 200V
= 125V
= 50V
FOR TEST CIRCUIT
SEE FIGURE
100
www.irf.com
30
100µsec
1msec
10msec
13
1000
40