IRF7453TR International Rectifier, IRF7453TR Datasheet - Page 6

• Manufacturer Part Number: IRF7453TR
• Description: MOSFET N-CH 250V 2.2A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7453TR

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 230 mOhm @ 1.3A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 2.2A
• Vgs(th) (max) @ Id: 5.5V @ 250µA
• Gate Charge (qg) @ Vgs: 38nC @ 10V
• Input Capacitance (ciss) @ Vds: 930pF @ 25V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

IRF7453
I
A S
12V
Fig 15a&b. Unclamped Inductive Test circuit
6
V
Fig 14a&b. Basic Gate Charge Test Circuit
GS
Same Type as D.U.T.
0.26
0.24
0.22
0.20
0.18
Fig 12. On-Resistance Vs. Drain Current
Current Regulator
.2 F
50K
3mA
t p
0
Current Sampling Resistors
.3 F
I
G
V
(B R )D S S
D.U.T.
4
I
D
and Waveforms
and Waveform
V GS = 10V
I D , Drain Current (A)
+
-
V
DS
V
8
R G
GS
20V
V D S
t p
V
G
Q
I A S
12
GS
D .U .T
0.01
L
Charge
Q
Q
GD
G
16
1 5 V
DRIVE R
+
-
20
V D D
A
Fig 13. On-Resistance Vs. Gate Voltage
0.35
0.30
0.25
0.20
0.15
500
400
300
200
100
0
Fig 15c. Maximum Avalanche Energy
6.0
25
Starting T , Junction Temperature ( C)
V GS, Gate -to -Source Voltage (V)
8.0
50
Vs. Drain Current
J
10.0
I D = 1.3A
75
12.0
100
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TOP
BOTTOM
14.0
125
°
1.0A
1.8A
2.2A
I D
16.0
150