STP50NE10 STMicroelectronics, STP50NE10 Datasheet - Page 3

• Manufacturer Part Number: STP50NE10
• Description: MOSFET N-CH 100V 50A TO-220
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STP50NE10

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 27 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 50A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 166nC @ 10V
• Input Capacitance (ciss) @ Vds: 6000pF @ 25V
• Power - Max: 180W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: 497-2644-5

STP50NE10
1
Electrical ratings
Table 1.
1. Pulse width limited by safe operating area
2. I
Table 2.
Table 3.
Rthc-sink
Symbol
R
Symbol
dv/dt
I
V
SD
P
R
DM
V
V
thj-case
T
E
DGR
T
I
I
I
TOT
DS
GS
stg
thj-a
T
AR
D
D
AS
J
≤ 50A, di/dt ≤ 300A/µs, V
(1)
l
(2)
Absolute maximum ratings
Thermal data
Avalanche characteristics
Drain-source voltage (V
Drain-gate voltage (R
Gate-source voltage
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
Total dissipation at T
Derating factor
Peak diode recovery voltage slope
Operating junction temperature
Storage temperature
Thermal resistance junction-case Max
Thermal resistance junction-ambient Max
Thermal resistance case-sink typ
Maximum lead temperature for soldering
purpose
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj Max)
Single pulse avalanche energy
(starting Tj=25°C, Id=Iar, Vdd=50V)
DD
≤ V
Parameter
(BR)DSS
C
GS
= 25°C
Parameter
GS
, T
= 20KΩ)
j
= 0)
≤ T
JMAX
C
C
=100°C
= 25°C
-65 to 175
Value
± 20
62.5
100
100
200
180
175
300
0.5
50
35
1
6
1
Value
300
50
Electrical ratings
W/°C
°C/W
°C/W
°C/W
V/ns
Unit
Unit
°C
mJ
W
°C
V
V
V
A
A
A
A
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