STP50NE10 STMicroelectronics, STP50NE10 Datasheet - Page 5

• Manufacturer Part Number: STP50NE10
• Description: MOSFET N-CH 100V 50A TO-220
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STP50NE10

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 27 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 50A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 166nC @ 10V
• Input Capacitance (ciss) @ Vds: 6000pF @ 25V
• Power - Max: 180W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: 497-2644-5

STP50NE10
Table 6.
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
Symbol
I
V
SDM
I
RRM
I
SD
Q
SD
t
rr
rr
(2)
(1)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Source drain diode
Parameter
I
I
di/dt = 100A/µs,
V
(see Figure 14)
SD
SD
DD
Test condictions
=50A, V
=50A,
=30V, Tj=150°C
GS
=0
Electrical characteristics
Min
Typ.
155
700
9
Max
1.5
24
6
Unit
µC
ns
A
A
V
A
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