STW26NM60 STMicroelectronics, STW26NM60 Datasheet

MOSFET N-CH 600V 30A TO-247

STW26NM60

Manufacturer Part Number
STW26NM60
Description
MOSFET N-CH 600V 30A TO-247
Manufacturer
STMicroelectronics
Series
MDmesh™r
Datasheet

Specifications of STW26NM60

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
135 mOhm @ 13A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
30A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
102nC @ 10V
Input Capacitance (ciss) @ Vds
2900pF @ 25V
Power - Max
313W
Mounting Type
Through Hole
Package / Case
TO-247-3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-3265-5

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February 2005
Table 1: General Features
DESCRIPTION
The MDmesh™ is a new revolutionary MOSFET
technology that associates the Multiple Drain pro-
cess with the Company’s PowerMESH™ horizon-
tal
outstanding low on-resistance, impressively high
dv/dt and excellent avalanche characteristics. The
adoption of the Company’s proprietary strip tech-
nique yields overall dynamic performance that is
significantly better than that of similar competi-
tion’s products.
APPLICATIONS
The MDmesh™ family is very suitable for increas-
ing power density of high voltage converters allow-
ing system miniaturization and higher efficiencies.
Table 2: Order Codes
STW26NM60
TYPICAL R
HIGH dv/dt AND AVALANCHE CAPABILITIES
IMPROVED ESD CAPABILITY
LOW INPUT CAPACITANCE AND GATE
CHARGE
LOW GATE INPUT RESISTANCE
layout.
SALES TYPE
STW26NM60
TYPE
The
DS
(on) = 0.125
resulting
600 V
V
DSS
< 0.135
R
product
MARKING
W26NM60
DS(on)
N-CHANNEL 600V - 0.125 - 30A TO-247
has
30 A
I
D
an
Figure 1: Package
Figure 2: Internal Schematic Diagram
PACKAGE
TO-247
MDmesh™ MOSFET
TO-247
STW26NM60
PACKAGING
1
TUBE
Rev. 5
2
3
1/9

Related parts for STW26NM60

STW26NM60 Summary of contents

Page 1

... Table 2: Order Codes SALES TYPE STW26NM60 February 2005 N-CHANNEL 600V - 0.125 - 30A TO-247 Figure 1: Package R I DS(on) D < 0.135 30 A product has an Figure 2: Internal Schematic Diagram MARKING PACKAGE W26NM60 TO-247 STW26NM60 MDmesh™ MOSFET TO-247 PACKAGING TUBE Rev. 5 1/9 ...

Page 2

... STW26NM60 Table 3: Absolute Maximum ratings Symbol V Drain-source Voltage ( Drain-gate Voltage (R DGR V Gate- source Voltage GS I Drain Current (continuous Drain Current (continuous Drain Current (pulsed Total Dissipation at T TOT Derating Factor V Gate source ESD(HBM-C=100pF, R=1.5K ESD(G-S) dv/dt (1) Peak Diode Recovery voltage slope ...

Page 3

... (see Figure 18) Test Conditions di/dt = 100 A/µ 100V DD (see Figure 16 di/dt = 100 A/µ 100V 150° (see Figure 16) STW26NM60 Min. Typ. Max. Unit 600 V 10 µA 100 µA ± 10 µ 0.125 0.135 Min. Typ. Max. Unit 20 S 2900 pF 900 pF 40 ...

Page 4

... STW26NM60 Figure 3: Safe Operating Area Figure 4: Output Characteristics Figure 5: Transconductance 4/9 Figure 6: Thermal Impedance Figure 7: Transfer Characteristics Figure 8: Static Drain-source On Resistance ...

Page 5

... Figure 9: Gate Charge vs Gate-source Voltage Figure 10: Normalized Gate Thereshold Volt- age vs Temperature Figure 11: Dource-Drain Diode Forward Char- acteristics Figure 12: Capacitance Variations Figure 13: Normalized On Resistance vs Tem- perature STW26NM60 5/9 ...

Page 6

... STW26NM60 Figure 14: Unclamped Inductive Load Test Cir- cuit Figure 15: Switching Times Test Circuit For Resistive Load Figure 16: Test Circuit For Inductive Load Switching and Diode Recovery Times 6/9 Figure 17: Unclamped Inductive Wafeform Figure 18: Gate Charge Test Circuit ...

Page 7

... STW26NM60 MAX. 0.20 0.102 0.055 0.094 0.134 0.03 0.793 0.620 0.582 0.17 0.143 0.216 7/9 ...

Page 8

... STW26NM60 Table 10: Revision History Date Revision 24-June-2004 4 04-Feb-2004 5 8/9 Description of Changes New Stylesheet. No Content Change New Id current on title in first page ...

Page 9

... All other names are the property of their respective owners Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America © 2005 STMicroelectronics - All Rights Reserved STMicroelectronics group of companies STW26NM60 9/9 ...

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