STW26NM60 STMicroelectronics, STW26NM60 Datasheet - Page 2

• Manufacturer Part Number: STW26NM60
• Description: MOSFET N-CH 600V 30A TO-247
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STW26NM60

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 135 mOhm @ 13A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 30A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 102nC @ 10V
• Input Capacitance (ciss) @ Vds: 2900pF @ 25V
• Power - Max: 313W
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-3265-5

STW26NM60
Table 3: Absolute Maximum ratings
( ) Pulse width limited by safe operating area
(1) I
Table 4: Thermal Data
Table 5: Avalanche Characteristics
ELECTRICAL CHARACTERISTICS (T
Table 6: Gate-Source Zener Diode
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
2/9
V
Rthj-case
Rthj-amb
dv/dt (1)
Symbol
Symbol
Symbol
SD
BV
I
ESD(G-S)
V
DM
P
V
V
E
T
I
DGR
TOT
I
I
T
T
AR
stg
DS
GS
AS
GSO
D
D
26A, di/dt 200A/µs, V
j
l
( )
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
Single Pulse Avalanche Energy
(starting T
Gate-Source Breakdown
Voltage
Drain-source Voltage (V
Drain-gate Voltage (R
Gate- source Voltage
Drain Current (continuous) at T
Drain Current (continuous) at T
Drain Current (pulsed)
Total Dissipation at T
Derating Factor
Gate source ESD(HBM-C=100pF, R=1.5K
Peak Diode Recovery voltage slope
Operating Junction Temperature
Storage Temperature
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Maximum Lead Temperature For Soldering Purpose
Parameter
j
DD
= 25 °C, I
V
(BR)DSS
D
C
GS
= I
= 25°C
, T
GS
j
= 20 k )
Parameter
j
max)
AR
Parameter
= 0)
T
, V
JMAX.
CASE
Igss=± 1mA (Open Drain)
DD
C
C
= 25°C
= 100°C
= 50 V)
=25°C UNLESS OTHERWISE SPECIFIED)
Test Conditions
Min.
30
-55 to 150
62.5
300
0.4
Value
6000
± 30
18.9
Max Value
600
600
120
313
2.5
30
15
Typ.
740
13
Max.
W/°C
V/ns
Unit
°C
Unit
W
V
V
V
A
A
A
V
°C/W
°C/W
V
Unit
mJ
°C
A