STB21NM60N-1 STMicroelectronics, STB21NM60N-1 Datasheet - Page 12
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STB21NM60N-1
Manufacturer Part Number
STB21NM60N-1
Description
MOSFET N-CH 600V 17A I2PAK
Manufacturer
STMicroelectronics
Series
MDmesh™r
Datasheet
1.STB21NM60N.pdf
(18 pages)
Specifications of STB21NM60N-1
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
220 mOhm @ 8.5A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
17A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
66nC @ 10V
Input Capacitance (ciss) @ Vds
1900pF @ 50V
Power - Max
140W
Mounting Type
Through Hole
Package / Case
I²Pak, TO-262 (3 straight leads + tab)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-5728
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STB21NM60N-1
Manufacturer:
ST
Quantity:
20 000
Package mechanical data
12/18
Dim.
Dia
G1
F1
F2
L2
L3
L4
L5
L6
L7
D
G
H
A
B
E
F
15.90
Min.
4.40
0.45
0.75
1.15
1.15
4.95
2.40
28.6
9.80
2.5
2.5
2.9
10
9
3
Dia
STP/F21NM60N - STB21NM60N - STB21NM60N-1 - STW21NM60N
TO-220FP mechanical data
mm.
Typ
16
10.40
10.60
16.40
Max.
4.60
2.75
0.70
1.00
1.50
1.50
5.20
2.70
30.6
9.30
2.7
3.6
3.2
0.173
0.098
0.098
0.017
0.030
0.045
0.045
0.195
0.094
0.393
1.126
0.385
0.114
0.626
0.354
0.118
Min.
0.630
inch
Typ.
7012510-I
0.181
0.106
0.108
0.027
0.039
0.067
0.067
0.204
0.106
0.409
1.204
0.417
0.141
0.645
0.366
0.126
Max.