STB21NM60N-1 STMicroelectronics, STB21NM60N-1 Datasheet - Page 8

• Manufacturer Part Number: STB21NM60N-1
• Description: MOSFET N-CH 600V 17A I2PAK
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STB21NM60N-1

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 220 mOhm @ 8.5A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 17A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 66nC @ 10V
• Input Capacitance (ciss) @ Vds: 1900pF @ 50V
• Power - Max: 140W
• Mounting Type: Through Hole
• Package / Case: I²Pak, TO-262 (3 straight leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-5728

Electrical characteristics
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Figure 14. Normalized gate threshold voltage
Figure 16. Source-drain diode forward
vs temperature
characteristics
STP/F21NM60N - STB21NM60N - STB21NM60N-1 - STW21NM60N
Figure 15. Normalized on resistance vs
Figure 17. Normalized BV
temperature
Dss
vs temperature