2SJ377(Q) Toshiba, 2SJ377(Q) Datasheet

2SJ377(Q)

Manufacturer Part Number

2SJ377(Q)

Description

MOSFET P-CHAN 60V 5A 2-7J1B

Manufacturer

Toshiba

Datasheet

1.2SJ377TE16R1NQ.pdf (6 pages)

Specifications of 2SJ377(Q)

Fet Type

MOSFET P-Channel, Metal Oxide

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

190 mOhm @ 2.5A, 10V

Drain To Source Voltage (vdss)

60V

Current - Continuous Drain (id) @ 25° C

Vgs(th) (max) @ Id

2V @ 1mA

Gate Charge (qg) @ Vgs

22nC @ 10V

Input Capacitance (ciss) @ Vds

630pF @ 10V

Power - Max

20W

Mounting Type

Through Hole

Package / Case

2-7B1B

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

2SJ377Q

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Relay Drive, DC/DC Converter and Motor Drive

Applications

Absolute Maximum Ratings

Thermal Characteristics

4 V gate drive

Low drain-source ON-resistance

High forward transfer admittance

Low leakage current

Enhancement mode

Drain-source voltage

Drain-gate voltage (R

Gate-source voltage

Drain current

Drain power dissipation (Tc = 25°C)

Single-pulse avalanche energy

Avalanche current

Repetitive avalanche energy (Note 3)

Channel temperature

Storage temperature range

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

Thermal resistance, channel to case

Thermal resistance, channel to ambient

Note 1: Ensure that the channel temperature does not exceed 150°C.

Note 2: V

Note 3: Repetitive rating: pulse width limited by maximum channel temperature

This transistor is an electrostatic-sensitive device. Handle with care.

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability

Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e.

reliability test report and estimated failure rate, etc).

Characteristic

TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (L

= −5 A

= −25 V, T

Pulse (Note 1)

= 20 kΩ)

: I

: V

DSS

(Note 1)

(Note 2)

= 25°C (initial), L = 14.84 mH, R

= −0.8 to −2.0 V (V

= −100 μA (max) (V

(Ta = 25°C)

Symbol

: R

: |Y

DGR

GSS

DSS

Symbol

stg

th (ch−c)

th (ch−a)

DS (ON)

| = 4.0 S (typ.)

2SJ377

= 0.16 Ω (typ.)

= −10 V, I

−55 to 150

= −60 V)

Rating

−60

±20

−20

273

150

−5

Max

6.25

125

= 25 Ω,

= −1 mA)

°C / W

Unit

°C

Weight: 0.36 g (typ.)

JEDEC

JEITA

TOSHIBA

0.6 ± 0.15

0.8 MAX.

2.3 ± 0.15

1. GATE

2. DRAIN

3. SOURSE

5.2 ± 0.2

−π−MOSV)

6.5 ± 0.2

（HEAT SINK）

2.3 ± 0.15

1.05 MAX.

2-7J1B

2010-02-05

―

2SJ377

Unit: mm

1.1 ± 0.2

0.6 MAX.

Related parts for 2SJ377(Q)

2SJ377(Q) Summary of contents

Page 1

... Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. ...

Page 2

... Qrr Note line under a Lot No. identifies the indication of product Labels [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment ...

Page 3

3 2SJ377 2010-02-05 ...

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4 2SJ377 2010-02-05 ...

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5 2SJ377 2010-02-05 ...

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... Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations. • The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise. • ...

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