BSP318S E6327 Infineon Technologies, BSP318S E6327 Datasheet - Page 3

• Manufacturer Part Number: BSP318S E6327
• Description: MOSFET N-CH 60V 2.6A SOT-223
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of BSP318S E6327

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 90 mOhm @ 2.6A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 2.6A
• Vgs(th) (max) @ Id: 2V @ 20µA
• Gate Charge (qg) @ Vgs: 20nC @ 10V
• Input Capacitance (ciss) @ Vds: 380pF @ 25V
• Power - Max: 1.8W
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: BSP318SE6327T; SP000011112

Electrical Characteristics, at T
Parameter
Dynamic Characteristics
Transconductance
V
Input capacitance
V
Output capacitance
V
Reverse transfer capacitance
V
Turn-on delay time
V
R
Rise time
V
R
Turn-off delay time
V
R
Fall time
V
R
DS
GS
GS
GS
DD
DD
DD
DD
G
G
G
G
= 16
= 16
= 16
= 16
= 0 V, V
= 0 V, V
= 0 V, V
= 30 V, V
= 30 V, V
= 30 V, V
= 30 V, V
2* I
D
* R
DS(on)max
DS
DS
DS
GS
GS
GS
GS
= 25 V, f = 1 MHz
= 25 V, f = 1 MHz
= 25 V, f = 1 MHz
= 4.5 V, I
= 4.5 V, I
= 4.5 V, I
= 4.5 V, I
, I
D
= 2.6 A
D
D
D
D
= 2.6 A,
= 2.6 A,
= 2.6 A,
= 2.6 A,
j
= 25 °C, unless otherwise specified
Rev 2.2
Page 3
Symbol
g
C
C
C
t
t
t
t
d(on)
r
d(off)
f
fs
iss
oss
rss
min.
2.4
-
-
-
-
-
-
-
Values
typ.
300
5.5
90
50
12
15
20
15
max.
380
120
65
20
25
30
25
2008-03-21
-
BSP318S
Unit
S
pF
ns