BSS138N E6433 Infineon Technologies, BSS138N E6433 Datasheet - Page 7
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BSS138N E6433
Manufacturer Part Number
BSS138N E6433
Description
MOSFET N-CH 60V 230MA SOT-23
Manufacturer
Infineon Technologies
Series
SIPMOS®r
Datasheet
1.BSS138N_L6327.pdf
(9 pages)
Specifications of BSS138N E6433
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
3.5 Ohm @ 230mA, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
230mA
Vgs(th) (max) @ Id
1.4V @ 250µA
Gate Charge (qg) @ Vgs
1.4nC @ 10V
Input Capacitance (ciss) @ Vds
41pF @ 25V
Power - Max
360mW
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BSS138NE6433XT
SP000014561
SP000014561
Rev. 2.82
13 Typ. gate charge
V
parameter: V
GS
=f(Q
12
10
8
6
4
2
0
0
gate
); I
DD
D
=0.23 A pulsed
0.2
0.4
Q
12 V
gate
[nC]
0.6
48 V
0.8
30 V
page 7
1
14 Drain-source breakdown voltage
V
BR(DSS)
70
65
60
55
50
-60
=f(T
j
); I
-20
D
=250 µA
20
T
j
60
[°C]
100
BSS138N
140
2009-02-11
180